JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1317 TO – 92S TRANSISTOR (PNP) 1. EMITTER FEATURES z Large Current Capacity and Wide ASO 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -0.2 A PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-0.01mA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-0.01mA,IC=0 -6 V Collector cut-off current ICBO VCB=-40V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA hFE(1) VCE=-6V, IC=-1mA 100 hFE(2) VCE=-6V, IC=-0.1mA 70 DC current gain 560 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.3 V Base-emitter saturation voltage VBE (sat) IC=-100mA,IB=-10mA -1 V Cob VCB=-6V,IE=0, f=1MHz Collector output capacitance fT Transition frequency VCE=-6V,IC=-10mA 4 pF 200 MHz CLASSIFICATION OF hFE(1) RANK R S T U RANGE 100-200 140-280 200-400 280-560 A,Dec,2010