2SC3356 High-Frequency Amplifier Transistor NPN Silicon 3 P b Lead(Pb)-Free 1 2 FEATURES 1. BASE 2. EMITTER 3. COLLECTOR * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain SOT-23 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter * Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 20 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 12 V Collector-emitter breakdown voltage VCE(sat) IC= 50mA, IB=5mA 200 mV Collector cut-off current ICBO VCB=10V, IE=0 1 μA Emitter cut-off current IEBO VEB=1V, IC=0 1 μA DC current gain hFE * VCE=3V, IC= 10mA Transition frequency fT VCE=10V, IC= 20mA Noise figure NF VCE=10V, IC= 7mA, f = 1GHz 82 270 7 GHz 2 dB pulse test: pulse width≤350μs, Duty cycle≤2% WEITRON http://www.weitron.com.tw 1/3 Rev.B 25-Feb-09 2SC3356 WEITRON http://www.weitron.com.tw 2/3 Rev.B 25-Feb-09 2SC3356 SOT-23 Package OutlineDimensions Unit:mm A B TOP V I EW E G Dim A B C D E G H J K L M C D H K J WEITRON http://www.weitron.com.tw L Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 M 3/3 Rev.B 25-Feb-09