AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET. The built in resistor guarantees proper clamp operation under all circuit conditions, and the MOSFET never goes into avalanche breakdown. Advanced trench technology provides excellent low Rdson, gate charge and body diode characteristics, making this device ideal for motor and inductive load control applications. Standard Product AOT500 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = Clamped ID = 80A (VGS = 10V) RDS(ON) < 5.3 mΩ (VGS = 10V) TO-220 D Top View Drain Connected to Tab G D G 10Ω S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage clamped VGS Gate-Source Voltage clamped Continuous Drain TC=25°C 80 Current G ID TC=100°C 57 Continuous Drain Gate Current +50 IDG Continuouse Gate Source Current +50 IGS Units V V A mA Pulsed Drain Current C IDM 250 A Avalanche Current L=100uHH IAR 50 A 125 115 58 -55 to 175 mJ Repetitive avalanche energy H EAR TC=25°C PD Power Dissipation B TC=100°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter A Maximum Junction-to-Ambient B Maximum Junction-to-Case Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJC Typ 60 0.7 W °C Max 75 1.3 Units °C/W °C/W www.aosmd.com AOT500 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS(z) Drain-Source Breakdown Voltage BVCLAMP Drain-Source Clamping Voltage IDSS(z) Zero Gate Voltage Drain Current BVGSS Gate-Source Voltage IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage ID(ON) On state drain current Conditions ID=10mA, VGS=0V ID=1A, VGS=0V VDS=16V, VGS=0V VDS=0V, ID=250µA VDS=0V, VGS=±10V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) Static Drain-Source On-Resistance gFS VSD IS Forward Transconductance VDS=5V, ID=30A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Min 33 36 Max 44 30 20 1.5 250 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=30A VGS=10V, VDS=15V, RL=0.5Ω, RGEN=3Ω IF=30A, dI/dt=100A/µs IF=30A, dI/dt=100A/µs Typ 2 10 3 Units V V µA V µΑ V A 4.1 6.2 95 0.7 5.3 4735 765 340 13 6150 69 34 12 15 25 35 150 62 60 84 89 nC nC nC nC ns ns ns ns 78 ns nC 1 80 17 mΩ S V A pF pF pF Ω A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. EAR and IAR are based on a 100uH inductor with Tj(start) = 25C for each pulse. 11 Rev 0_prelim: December 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT500 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 100 6V 10V 200 5V 80 150 60 ID(A) ID (A) VDS=5V 7V 4.5V 100 40 VGS 50 4V =10V, ID=30A 25°C 125°C 20 VGS=3.5V 0 -40°C 0 0 1 2 3 4 5 1 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 2 Normalized On-Resistance VGS=10V 4.5 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics 5 4 3.5 3 1.8 VGS=10V ID=30A 1.6 1.4 20 48 30 10 1.2 1 0.8 26 63 40 13 0.6 0 5 10 15 20 25 30 -50 -25 14 25 50 75 100 125 150 175 200 100 ID=30A 10 10 1 IS (A) 12 8 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage RDS(ON) (mΩ) 1.5 125°C 125°C 0.1 25°C 0.01 6 -40°C 0.001 4 25°C 0.0001 2 0.0 2 5 8 11 14 17 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOT500 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 VDS=30V ID=30A 6000 6 4 VGS=10V, ID=30A Capacitance (pF) VGS (Volts) 8 2 Ciss 5000 4000 3000 2000 Crss 0 0 0 10 20 30 40 50 60 70 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 10000 1ms 10 Power (W) 100µs TJ(Max)=175°C TC=25°C 20 48 30 10 1000 26 63 40 13 DC 1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 30 TJ(Max)=175°C TA=25°C 10ms 0.1 25 10µs RDS(ON) 100 limited ZθJC Normalized Transient Thermal Resistance 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000 ID (Amps) Coss 1000 100 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=1.3°C/W 1 0.1 PD Single Pulse 0.01 0.00001 0.0001 0.001 Ton 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOT500 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS tA = 120 L ⋅ ID BV − VDD 10 VGS=10V, ID=30A 100 80 60 40 20 TC=25°C 0 1 0.01 0.1 1 10 100 1000 Time in avalanche, tA (us) Figure 12: Single Pulse Avalanche capability 100 80 Current rating ID(A) Power Dissipation (W) ID(A), Peak Avalanche Current 100 60 40 20 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 175 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 175 AOT500 TYPICAL PROTECTION CHARACTERISTICS 2.00 Trench BV ID (A) 1.50 BVCLAMP 1.00 0.50 D BVDSS(Z) 0.00 30 35 40 45 R G VDS (Volts) Fig 15: BVCLAMP Characteristic VGS(PLATEAU)= 10Ω x 300mA =3V It can also be said that the VDS during clamping is equal to: BVDSS = BVCLAMP + VGS(PLATEAU) Additional power loss associated with the protection circuitry can be considered negligible when compare to the conduction losses of the MOSFET itself; + + - VPLATEAU S - 60.00 50.00 ID (A)/ Vds(V) This device uses built-in Gate to Source and Gate to Drain zener protection. While the Gate-Source zener protects against excessive VGS conditions, the Gate to Drain protection, clamps the VDS well below the device breakdown, preventing an avalanche condition within the MOSFET as a result of voltage over-shoot at the Drain electrode. It is designed to breakdown well before the device breakdown. During such an event, current flows through the zener clamp, which is situated internally between the Gate to Drain. This current flows at BVDSS(Z), building up the VGS internal to the device. When the current level through the zener reaches approximately 300mA, the VGS is approximately equal to VGS(PLATEAU), allowing significant channel conduction and thus clamping the Drain to Source voltage. The VGS needed to turn the device on is controlled with an internally lumped gate resistor R approximately equal to 10Ω. + Vz - BVCLAMP25oC 40.00 30.00 o BVCLAMP 100 C 20.00 10.00 0.00 0.00E+00 2.50E-06 5.00E-06 7.50E-06 1.00E-05 Time in Avalanche (Seconds) Fig 16: Unclamped Inductive Switching EX: PL=30µAmax x 16V=0.48mW (Zener leakage loss) PL(rds)=102A x 6mΩ=300mW (MOSFET loss) Alpha & Omega Semiconductor, Ltd. Fig16: The built-in Gate to Drain clamp prevents the device from going into Avalanche by setting the clamp voltage well below the actual breakdown of the device. When the Drain to Gate voltage approaches the BV clamp, the internal Gate to Source voltage is charged up and channel conduction occurs, sinking the current safely through the device. The BVCLAMP is virtually temperature independent, providing even greater protection during normal operation.