OPA2333-HT www.ti.com SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES Check for Samples: OPA2333-HT FEATURES 1 • • • • • • D, JD OR HKJ PACKAGE (TOP VIEW) Low Offset Voltage: 26 μV (Max) 0.01-Hz to 10-Hz Noise: 1.5 μVPP Quiescent Current: 50 μA Single-Supply Operation Supply Voltage: 1.8 V to 5.5 V Rail-to-Rail Input/Output OUT A -IN A +IN A V- Down-Hole Drilling High Temperature Environments V+ SUPPORTS EXTREME TEMPERATURE APPLICATIONS • • • • • • • • (1) 8 2 7 3 6 4 5 V+ OUT B -IN B +IN B HKQ PACKAGE (TOP VIEW) APPLICATIONS • • 1 1 OUT A OUT B -IN A -IN B +IN A +IN B Controlled Baseline One Assembly/Test Site One Fabrication Site Available in Extreme (–55°C/210°C) Temperature Range (1) Extended Product Life Cycle Extended Product-Change Notification Product Traceability Texas Instruments' high temperature products utilize highly optimized silicon (die) solutions with design and process enhancements to maximize performance over extended temperatures. 8 5 4 V- HKQ as formed or HKJ mounted dead bug Custom temperature ranges available DESCRIPTION/ORDERING INFORMATION (2) The OPA2333 series of CMOS operational amplifiers uses a proprietary auto-calibration technique to simultaneously provide very low offset voltage and near-zero drift over time and temperature. These miniature, high-precision, low-quiescent-current amplifiers offer high-impedance inputs that have a common-mode range 100 mV beyond the rails, and rail-to-rail output that swings within 150 mV of the rails. Single or dual supplies as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V) may be used. They are optimized for low-voltage single-supply operation. The OPA2333 family offers excellent common-mode rejection ratio (CMRR) without the crossover associated with traditional complementary input stages. This design results in superior performance for driving analog-todigital converters (ADCs) without degradation of differential linearity. (2) 1 Refer to Electrical Characteristics for performance degradation over temperature. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2012, Texas Instruments Incorporated OPA2333-HT SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 www.ti.com Table 1. ORDERING INFORMATION (1) TA PACKAGE ORDERABLE PART NUMBER KGD –55°C to 210°C –55°C to 175°C (1) TOP-SIDE MARKING OPA2333SKGD1 NA OPA2333SKGD2 JD OPA2333SJD OPA2333SJD HKJ OPA2333SHKJ OPA2333SHKJ HKQ OPA2333SHKQ OPA2333SHKQ D OPA2333HD O2333H For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. BARE DIE INFORMATION DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION 15 mils. Silicon with backgrind V- Al-Si-Cu (0.5%) Table 2. BOND PAD COORDINATES 2 DESCRIPTION PAD NUMBER a b c d OUT A 1 21.20 1288.50 97.20 1364.50 –IN A 2 21.20 923.65 97.20 999.65 +IN A 3 21.20 533.05 97.20 609.05 V– 4 31.30 172.20 107.30 248.20 +IN B 5 864.80 162.25 940.80 238.25 –IN B 6 864.80 552.65 940.80 628.65 OUT B 7 864.80 897.10 940.80 973.10 V+ 8 854.70 1280.45 930.70 1356.45 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT OPA2333-HT www.ti.com SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 | | | 962 mm OUT A V+ -IN A -IN B +IN A V- 1490 mm | +IN B | | 38 mm OUT B 38 mm Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT 3 OPA2333-HT SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 www.ti.com THERMAL CHARACTERISTICS FOR JD PACKAGE over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS High-K board MIN TYP (2) , no airflow MAX UNIT 64.9 θJA Junction-to-ambient thermal resistance (1) θJB Junction-to-board thermal resistance High-K board without underfill 27.9 °C/W θJC Junction-to-case thermal resistance 6.49 °C/W (1) (2) No airflow °C/W 83.4 The intent of θJA specification is solely for a thermal performance comparison of one package to another in a standardized environment. This methodology is not meant to and will not predict the performance of a package in an application-specific environment. JED51-7, high effective thermal conductivity test board for leaded surface mount packages THERMAL CHARACTERISTICS FOR HKJ OR HKQ PACKAGE over operating free-air temperature range (unless otherwise noted) PARAMETER θJC Junction-to-case thermal resistance MIN TYP to ceramic side of case MAX 5.7 to top of case lid (metal side of case) 13.7 UNIT °C/W THERMAL CHARACTERISTICS FOR D PACKAGE over operating free-air temperature range (unless otherwise noted) PARAMETER θJC MIN TYP Junction-to-case thermal resistance (to bottom of case) MAX UNIT 39.4 °C/W Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN Supply voltage Signal input terminals, voltage (2) Output short circuit (3) Operating temperature range Junction temperature ESD rating (1) (2) (3) 4 –0.3 MAX UNIT 7 V (V+) + 0.3 V Continuous JD, HKJ, HKQ packages –55 210 D package –55 175 JD, HKJ, HKQ packages 210 D package 175 Human-Body Model (HBM) 4000 Charged-Device Model (CDM) 1000 °C °C V Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Input terminals are diode clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current limited to 10 mA or less. Short circuit to ground, one amplifier per package. Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT OPA2333-HT www.ti.com SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 Electrical Characteristics: VS = 1.8 V to 5.5 V Boldface limits apply over the specified temperature range, TA = –55°C to 210°C. At TA = 25°C, RL = 10 kΩ connected to VS/2, VCM = VS/2, and VOUT = VS/2 (unless otherwise noted). TA = 175°C (1) TA = –55°C to 125°C PARAMETER TEST CONDITIONS MIN TYP MAX 2 10 MIN TYP TA = 210°C MAX MIN TYP (2) MAX UNIT OFFSET VOLTAGE Input offset voltage VOS VS = 5 V over temperature vs temperature vs power supply μV 22 dVOS/dT PSRR 26 0.02 VS = 1.8 V to 5.5 V 1 Long-term stability (3) See Channel separation, dc 26 0.05 6 1.2 μV/°C 0.05 8 μV 1.7 11 μV/V (3) μV/V 0.1 INPUT BIAS CURRENT Input bias current IB ±70 over Temperature Input offset current ±200 pA ±150 IOS ±140 ±400 ±1250 ±5300 pA ±700 ±1060 0 pA NOISE Input voltage noise, f = 0.01 Hz to 1 Hz 0.3 1.0 1.0 μVPP Input voltage noise, f = 0.1 Hz to 10 Hz 1.1 1.5 1.5 μVPP Input current noise, f = 10 Hz in 100 fA/√Hz INPUT VOLTAGE RANGE (4) Common mode voltage range Common-Mode Rejection Ratio (V–) – 0.1 VCM CMRR (V–) – 0.1 V < VCM < (V+) + 0.1 V 102 (V+) + (V–) – 0.1 0.25 130 (V+) + (V–) – 0.25 0.25 101 (V+) + 0.25 V 91 dB INPUT CAPACITANCE Differential 2 4.25 4.25 pF Common mode 4 12.25 12.25 pF 93 dB OPEN-LOOP GAIN Open-loop voltage gain AOL (V–) + 100 mV < VO < (V+) – 100 mV, RL = 10 kΩ 104 130 93 110 85 FREQUENCY RESPONSE Gain-bandwidth product Slew rate (1) (2) (3) (4) GBW SR CL = 100 pF 350 350 350 kHz G=1 0.16 0.25 0.25 V/μs Minimum and maximum parameters are characterized for operation at TA = 175°C, but may not be production tested at that temperature. Production test limits with statistical guardbands are used to ensure high temperature performance. Minimum and maximum parameters are characterized for operation at TA = 210°C, but may not be production tested at that temperature. Production test limits with statistical guardbands are used to ensure high temperature performance. 300-hour life test at 150°C demonstrated randomly distributed variation of approximately 1 μV. The OPA2333-HT is not intended to be used as a comparator due to its limited differential input range capability. Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT 5 OPA2333-HT SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 www.ti.com Electrical Characteristics: VS = 1.8 V to 5.5 V (continued) Boldface limits apply over the specified temperature range, TA = –55°C to 210°C. At TA = 25°C, RL = 10 kΩ connected to VS/2, VCM = VS/2, and VOUT = VS/2 (unless otherwise noted). TA = 175°C (1) TA = –55°C to 125°C PARAMETER TEST CONDITIONS MIN TYP MAX 30 50 MIN TYP TA = 210°C MAX MIN TYP (2) MAX UNIT OUTPUT Voltage output swing from rail RL = 10 kΩ over temperature RL = 10 kΩ Short-circuit current Capacitive load drive mV 85 ISC 110 150 mV ±5 mA 2 kΩ CL (5) Open-loop output impedance f = 350 kHz, IO = 0 POWER SUPPLY Specified voltage range VS Quiescent current per amplifier IQ 1.8 IO = 0 5.5 17 over temperature Turn-on time 5.5 1.8 5.5 V μA 25 30 VS = 5 V 1.8 35 40 50 80 μA μs 100 TEMPERATURE RANGE Specified range -55 to 210 -55 to 175 -55 to 210 °C Operating range -55 to 210 -55 to 175 -55 to 210 °C (5) 6 See Typical Characteristics. Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT OPA2333-HT www.ti.com SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 Estimated Life (Hours) 1000000 100000 Electromigration Fail Mode 10000 1000 110 Wirebond Fail Mode 120 130 140 150 160 170 180 190 200 210 Continuous TJ (°C) (1) See datasheet for absolute maximum and minimum recommended operating conditions. (2) Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect life). (3) The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the dominant failure mechanism affecting device wearout for the specific device process and design characteristics. (4) Wirebond fail mode applicable for D package only. Figure 1. OPA2333SKGD1/OPA2333HD Operating Life Derating Chart Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT 7 OPA2333-HT SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 www.ti.com TYPICAL CHARACTERISTICS At TA = 25°C, VS = 5 V, and CL = 0 pF (unless otherwise noted). OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION −10 −9 −8 −7 −6 −5 −4 −3 −2 −1 0 1 2 3 4 5 6 7 8 9 10 0 0.0025 0.0050 0.0075 0.0100 0.0125 0.0150 0.0175 0.0200 0.0225 0.0250 0.0275 0.0300 0.0325 0.0350 0.0375 0.0400 0.0425 0.0450 0.0475 0.0500 Population Population OFFSET VOLTAGE PRODUCTION DISTRIBUTION Offset Voltage (µV) Offset Voltage Drift (µV/_ C) COMMON−MODE REJECTION RATIO vs FREQUENCY 250 140 100 200 120 80 150 100 60 100 40 50 20 0 40 −50 20 −100 0 0 −20 10 100 1k 10k 100k CMRR (dB) 120 Phase (_ ) AOL (dB) OPEN−LOOP GAIN vs FREQUENCY 80 60 1M 1 10 100 Frequency (Hz) 1k 10k 100k Frequency (Hz) POWER−SUPPLY REJECTION RANGE vs FREQUENCY OUTPUT VOLTAGE SWING vs OUTPUT CURRENT 120 3 VS = ±2.75V VS = ±0.9V +PSRR 100 2 Output Swing (V) PSRR (dB) −PSRR 80 60 40 −40_C 1 0 0 −3 100 1k 10k 100k 1M +25_C +125_C +25_C −40_ C 0 1 Frequency (Hz) 8 −40_ C −1 −2 10 +25_C +125_C 20 1 1M 2 3 4 5 6 7 8 9 10 Output Current (mA) Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT OPA2333-HT www.ti.com SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 TYPICAL CHARACTERISTICS (continued) INPUT BIAS CURRENT vs COMMON−MODE VOLTAGE INPUT BIAS CURRENT vs TEMPERATURE 100 200 80 60 VS = 5V −IB 50 IB (pA) 20 0 −20 0 +IB −50 −40 VS = 5.5V VS = 1.8V −IB 100 40 IB (pA) 150 −IB −100 −60 +IB −80 −200 −100 1 0 +I B −150 2 3 4 5 −25 −50 0 25 50 75 100 125 Temperature (_ C) Common−Mode Voltage (V) LARGE−SIGNAL STEP RESPONSE QUIESCENT CURRENT vs TEMPERATURE G=1 RL = 10kΩ Output Voltage (1V/div) IQ (mA) 60 40 20 0 -55 -25 0 25 50 75 100 125 150 175 200 210 Time (50µs/div) Temperature (°C) SMALL−SIGNAL STEP RESPONSE POSITIVE OVER- VOLTAGE RECOVERY Output Voltage (50mV/div) 2V/div G = +1 RL = 10kΩ 0 Input Output 1 0k Ω 1V/div +2 .5V 1 kΩ 0 OPA2333 −2.5V Time (5µs/div) Time (50µs/div) Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT 9 OPA2333-HT SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) SETTLING TIME vs CLOSED−LOOP GAIN NEGATIVE OVER- VOLTAGE RECOVERY 600 4V Step 500 Settling Time (µs) 1V/div 2V/div Input 0 0 10k Ω + 2.5V 1kΩ 400 300 200 0.001% Output O PA2333 100 0.01% − 2.5V 0 10 1 Time (50µs/div) 100 Gain (dB) SMALL−SIGNAL OVERSHOOT vs LOAD CAPACITANCE 0.1Hz TO 10Hz NOISE 40 35 25 500nV/div Overshoot (%) 30 20 15 10 5 0 10 100 1000 1s/div Load Capacitance (pF) CURRENT AND VOLTAGE NOISE SPECTRAL DENSITY vs FREQUENCY Voltage Noise (nV//Hz) Continues with no 1/f (flicker) noise. Current Noise 100 100 Voltage Noise Current Noise (fA//Hz) 1000 1000 10 10 1 10 100 1k 10k Frequency (Hz) 10 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT OPA2333-HT www.ti.com SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 APPLICATION INFORMATION (1) The OPA2333 is unity-gain stable and free from unexpected output phase reversal. It uses a proprietary autocalibration technique to provide low offset voltage and very low drift over time and temperature. For lowest offset voltage and precision performance, circuit layout and mechanical conditions should be optimized. Avoid temperature gradients that create thermoelectric (Seebeck) effects in the thermocouple junctions formed from connecting dissimilar conductors. These thermally-generated potentials can be made to cancel by ensuring they are equal on both input terminals. Other layout and design considerations include: • Use low thermoelectric-coefficient conditions (avoid dissimilar metals) • Thermally isolate components from power supplies or other heat sources • Shield op amp and input circuitry from air currents, such as cooling fans Following these guidelines will reduce the likelihood of junctions being at different temperatures, which can cause thermoelectric voltages of 0.1 μV/°C or higher, depending on materials used. Operating Voltage The OPA2333 op amp operates over a power-supply range of 1.8 V to 5.5 V (±0.9 V to ±2.75 V). Supply voltages higher than 7 V (absolute maximum) can permanently damage the device. Parameters that vary over supply voltage or temperature are shown in the Typical Characteristics section of this data sheet. Input Voltage The OPA2333 input common-mode voltage range extends 0.1 V beyond the supply rails. The OPA2333 is designed to cover the full range without the troublesome transition region found in some other rail-to-rail amplifiers. Normally, input bias current is about 70 pA; however, input voltages exceeding the power supplies can cause excessive current to flow into or out of the input pins. Momentary voltages greater than the power supply can be tolerated if the input current is limited to 10 mA. This limitation is easily accomplished with an input resistor(see Figure 2). Current- limiting resistor required if input voltage exceeds supply rails by ≥ 0.5V. IOVERLOAD 10mA max +5V OPA2333 VOUT VIN 5kΩ Figure 2. Input Current Protection Internal Offset Correction The OPA2333 op amp uses an auto-calibration technique with a time-continuous 350-kHz op amp in the signal path. This amplifier is zero corrected every 8 μs using a proprietary technique. Upon power up, the amplifier requires approximately 100 μs to achieve specified VOS accuracy. This design has no aliasing or flicker noise. (1) At TA = 25°C (unless otherwise noted). Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT 11 OPA2333-HT SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 www.ti.com Achieving Output Swing to the Op Amp Negative Rail Some applications require output voltage swings from 0 V to a positive full-scale voltage (such as 2.5 V) with excellent accuracy. With most single-supply op amps, problems arise when the output signal approaches 0 V, near the lower output swing limit of a single-supply op amp. A good single-supply op amp may swing close to single-supply ground, but will not reach ground. The output of the OPA2333 can be made to swing to ground, or slightly below, on a single-supply power source. To do so requires the use of another resistor and an additional, more negative, power supply than the op amp negative supply. A pulldown resistor may be connected between the output and the additional negative supply to pull the output down below the value that the output would otherwise achieve (see Figure 3). V+ = +5V OPA2333 VOUT VIN RP = 20kΩ Op Amp V− = Gnd −5V Additional Negative Supply Figure 3. VOUT Range to Ground The OPA2333 has an output stage that allows the output voltage to be pulled to its negative supply rail, or slightly below, using the technique previously described. This technique only works with some types of output stages. The OPA2333 has been characterized to perform with this technique; however, the recommended resistor value is approximately 20 kΩ. Note that this configuration will increase the current consumption by several hundreds of microamps. Accuracy is excellent down to 0 V and as low as –2 mV. Limiting and nonlinearity occurs below –2 mV, but excellent accuracy returns as the output is again driven above –2 mV. Lowering the resistance of the pulldown resistor allows the op amp to swing even further below the negative rail. Resistances as low as 10 kΩ can be used to achieve excellent accuracy down to –10 mV. General Layout Guidelines Attention to good layout practices is always recommended. Keep traces short and, when possible, use a printed circuit board (PCB) ground plane with surface-mount components placed as close to the device pins as possible. Place a 0.1-μF capacitor closely across the supply pins. These guidelines should be applied throughout the analog circuit to improve performance and provide benefits, such as reducing the electromagnetic interference (EMI) susceptibility. Operational amplifiers vary in their susceptibility to radio frequency interference (RFI). RFI can generally be identified as a variation in offset voltage or dc signal levels with changes in the interfering RF signal. The OPA2333 has been specifically designed to minimize susceptibility to RFI and demonstrates remarkably low sensitivity compared to previous-generation devices. Strong RF fields may still cause varying offset levels. 12 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT OPA2333-HT www.ti.com SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 R E F 3140 +5V 4.096V + 0.1mF R9 150kΩ R1 6.04kΩ R5 31.6kΩ D1 +5V 0.1m F − + + R2 549Ω O PA2333 R6 200Ω K−Type Thermocouple 40.7mV/°C A. + − R2 2.94kΩ R4 6.04kΩ R3 60.4Ω VO Zero Adj. REF3140 has not been characterized or tested at 210°C. Figure 4. Temperature Measurement Figure 5 shows the basic configuration for a bridge amplifier. VEX R1 +5V R R R R OPA2333 VOUT R1 VREF Figure 5. Single Op-Amp Bridge Amplifier A low-side current shunt monitor is shown in Figure 6. RN are operational resistors used to isolate the ADS1100 from the noise of the digital I2C bus. Since the ADS1100 is a 16-bit converter, a precise reference is essential for maximum accuracy. If absolute accuracy is not required, and the 5-V power supply is sufficiently stable, the REF3130 may be omitted. Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT 13 OPA2333-HT SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 www.ti.com 3V +5V REF3130 Load R2 49.9kΩ R1 4.99kΩ R6 71.5kΩ V I LOAD RSHUNT 1Ω RN 56Ω OPA2333 R3 4.99kΩ R4 48.7kΩ ADS1100 R7 1.18kΩ Stray Ground- Loop Resistance RN 56Ω I 2C (PGA Gain = 4) FS = 3.0V NOTE: 1% resistors provide adequate common- mode rejection at small ground- loop errors. A. REF3130 and ADS1100 have not been characterized or tested at 210°C. Figure 6. Low-Side Current Monitor RG R S HUNT zener(1) R 1(2) 10kΩ V+ MOS F E T rated to stand−off supply voltage. OPA2333 +5V V+ Two zener biasing methods are shown. (3) Load Output R B IAS RL NOTE S : (1) zener rated for op amp supply capability (that is, 5.1V for OPA2333). (2) C urrent−limiting resistor. (3) C hoose zener biasing resistor or dual NMOS F E TS Figure 7. High-Side Current Monitor 14 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT OPA2333-HT www.ti.com SBOS483G – JULY 2009 – REVISED SEPTEMBER 2012 100 kΩ 60 kΩ 1 MΩ 3V NTC Thermistor OPA2333 1 MΩ Figure 8. Thermistor Measurement V1 −In INA152 OPA2333 R2 R1 2 5 6 R2 VO 1 3 OPA2333 V2 +In A. VO = (1 + 2R2/R1) (V2 − V1) INA152 has not been characterized or tested at 210°C. Figure 9. Precision Instrumentation Amplifier Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: OPA2333-HT 15 PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) OPA2333HD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-4-260C-72 HR -55 to 175 O2333H OPA2333SHKJ ACTIVE CFP HKJ 8 1 TBD Call TI N / A for Pkg Type -55 to 210 OPA2333S HKJ OPA2333SHKQ ACTIVE CFP HKQ 8 1 TBD AU N / A for Pkg Type -55 to 210 OPA2333S HKQ OPA2333SJD ACTIVE CDIP SB JD 8 1 TBD POST-PLATE N / A for Pkg Type -55 to 210 OPA2333SJD OPA2333SKGD1 ACTIVE XCEPT KGD 0 100 TBD Call TI Call TI -55 to 210 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF OPA2333-HT : • Catalog: OPA2333 • Automotive: OPA2333-Q1 NOTE: Qualified Version Definitions: • Catalog - TI's standard catalog product • Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. 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