TLV1171 www.ti.com SBVS177 – APRIL 2012 1-A, Positive Fixed-Voltage, Low-Dropout Regulator FEATURES DESCRIPTION • • The TLV1171 low-dropout (LDO) linear regulator is a low input voltage version of the popular 1117 voltage regulator. 1 2 • • • • • • • • • Accuracy: 1.5% (typ) Low IQ: 100 μA (max) – 500x Lower Than Standard 1117 Devices VIN: 2.0 V to 5.5 V – Absolute Maximum VIN: 6.0 V Stable with 0-mA Output Current Low Dropout: 455 mV at 1 A for VOUT = 3.3 V High PSRR: 65 dB at 1 kHz Minimum Ensured Current Limit: 1.1 A Stable with Cost-Effective Ceramic Capacitors: – With 0-Ω ESR Temperature Range: –40°C to +125°C Thermal Shutdown and Overcurrent Protection Available Package: SOT223 – See the Package Option Addendum at the end of this document for a complete list of available voltage options. APPLICATIONS • • • • • Set Top Boxes TVs and Monitors PC Peripherals, Notebooks, and Motherboards Modems and Other Communication Products Switching Power-Supply Post-Regulation The TLV1171 is an extremely low-power device that consumes 500x lower quiescent current than the traditional 1117 voltage regulator, making the TLV1171 suitable for applications that mandate very low standby current. The TLV1171 LDO is also stable with 0 mA of load current; there is no minimum load requirement, making the device an ideal choice for applications where the regulator is required to power very small loads during standby in addition to large currents on the order of 1 A during normal operation. The TLV1171 offers excellent line and load transient performance, resulting in very small magnitude output voltage undershoots and overshoots when the load current requirement changes from less than 1 mA to more than 500 mA. A precision band gap and error amplifier provides 1.5% accuracy. A very high power-supply rejection ratio enables the device to be used for postregulation after a switching regulator. Other valuable features include low output noise and low-dropout voltage. The device is internally compensated to be stable with 0-Ω equivalent series resistance (ESR) capacitors. These key advantages enable the use of cost-effective, small-size ceramic capacitors. Costeffective capacitors that have higher bias voltages and temperature derating can also be used if desired. The TLV1171 is available in a SOT223 package. For alternate pin outs of the device, refer to the TLV1117LV. GND TLV1171xxDCY 3 VOUT 2 GND 1 VIN 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated TLV1171 SBVS177 – APRIL 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION (1) PRODUCT TLV1171vvyyyz (1) VOUT VV is the nominal output voltage (for example, 33 = 3.3 V). YYY is the package designator. Z is the package quantity. Use R for reel (2500 pieces), and T for tape (250 pieces). For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the device product folder at www.ti.com. ABSOLUTE MAXIMUM RATINGS (1) At TJ = +25°C, unless otherwise noted. All voltages are with respect to GND. VALUE Voltage Current MIN MAX UNIT Input voltage range, VIN –0.3 +6.0 V Output voltage range, VOUT –0.3 +6.0 V Maximum output current, IOUT Internally limited Output short-circuit duration Indefinite Continuous total power dissipation Temperature See Thermal Information Table Operating junction, TJ –55 +150 °C Storage, Tstg –55 +150 °C 2 kV 500 V Human body model (HBM) QSS 009-105 (JESD22-A114A) Electrostatic discharge (ESD) ratings (1) PDISS Charged device model (CDM) QSS 009-147 (JESD22-C101B.01) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability. THERMAL INFORMATION TLV1171 THERMAL METRIC (1) DCY (SOT223) UNITS 3 PINS θJA Junction-to-ambient thermal resistance 62.9 θJCtop Junction-to-case (top) thermal resistance 47.2 θJB Junction-to-board thermal resistance 12.0 ψJT Junction-to-top characterization parameter 6.1 ψJB Junction-to-board characterization parameter 11.9 θJCbot Junction-to-case (bottom) thermal resistance N/A °C/W space (1) 2 For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953A. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated TLV1171 www.ti.com SBVS177 – APRIL 2012 ELECTRICAL CHARACTERISTICS At TA = +25°C, VIN = VOUT(TYP) + 1.5 V, IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted. TLV1171 PARAMETER VIN TEST CONDITIONS MIN Input voltage range VOUT > 2 V VOUT DC output accuracy 1.5 V ≤ VOUT < 2 V 1.2 V ≤ VOUT < 1.5 V TYP MAX UNIT 2.0 5.5 V –1.5 +1.5 % –2 +2 % –40 +40 mV ΔVO/ΔVIN Line regulation VOUT(NOM) + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 10 mA 1 5 mV ΔVO/ΔIOUT Load regulation 0 mA ≤ IOUT ≤ 1 A 1 35 mV VOUT < 3.3 V Dropout voltage (1) VDO VIN = 0.98 x VOUT(NOM) VOUT ≥ 3.3 V IOUT = 200 mA 115 mV IOUT = 500 mA 285 mV IOUT = 800 mA 455 mV IOUT = 1 A 570 800 mV IOUT = 200 mA 90 mV IOUT = 500 mA 230 mV IOUT = 800 mA 365 IOUT = 1 A 455 700 mV 100 µA mV ICL Output current limit VOUT = 0.9 × VOUT(NOM) IQ Quiescent current IOUT = 0 mA 50 PSRR Power-supply rejection ratio VIN = 3.3 V, VOUT = 1.8 V, IOUT = 500 mA, f = 100 Hz 65 dB VN Output noise voltage BW = 10 Hz to 100 kHz, VIN = 2.8 V, VOUT = 1.8 V, IOUT = 500 mA 60 µVRMS tSTR Startup time (2) COUT = 1.0 µF, IOUT = 1 A 100 µs UVLO Undervoltage lockout VIN rising 1.95 V TSD Thermal shutdown temperature Shutdown, temperature increasing +165 °C Reset, temperature decreasing +145 °C TJ Operating junction temperature (1) (2) 1.1 –40 A +125 °C VDO is measured for devices with VOUT(NOM) = 2.5 V so that VIN = 2.45 V. Startup time is the time from when VIN asserts to when output is sustained at a value greater than or equal to 0.98 × VOUT(NOM). Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 3 TLV1171 SBVS177 – APRIL 2012 www.ti.com PIN CONFIGURATION GND DCY PACKAGE SOT223 (TOP VIEW) 3 VOUT 2 GND 1 VIN PIN DESCRIPTIONS NAME PIN GND 2, Tab DESCRIPTION IN 1 Input pin. See the Input and Output Capacitor Requirements section for more details. OUT 3 Regulated output voltage pin. See the Input and Output Capacitor Requirements section for more details. Ground pin FUNCTIONAL BLOCK DIAGRAM IN OUT Current Limit Thermal Shutdown UVLO Bandgap LOGIC TLV1171 Series GND Figure 1. Block Diagram 4 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated TLV1171 www.ti.com SBVS177 – APRIL 2012 TYPICAL CHARACTERISTICS At TA = +25°C, VIN = VOUT(TYP) + 1.5 V; IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted. LINE REGULATION LINE REGULATION 1.9 1.9 1.85 1.8 +125°C +85°C +25°C -40°C 1.75 VOUT = 1.8 V IOUT = 1 A Output Voltage (V) Output Voltage (V) VOUT = 1.8 V IOUT = 10 mA 1.85 1.8 1.75 1.7 +85°C +25°C -40°C 1.7 2.3 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 3.3 3.5 3.7 3.9 Input Voltage (V) 4.1 4.3 4.5 4.7 4.9 5.1 5.3 Figure 2. Figure 3. LOAD REGULATION DROPOUT VOLTAGE vs INPUT VOLTAGE 1200 1.9 VOUT = 1.8 V +85°C +25°C -40°C 1.85 1.8 +125°C +85°C +25°C -40°C 1.75 Dropout Voltage (mV) 1000 Output Voltage (V) 5.5 Input Voltage (V) 800 600 400 200 0 1.7 0 100 200 300 400 500 600 700 800 900 1000 2 2.5 3 Output Current (mA) 4 3.5 4.5 Input Voltage (V) Figure 4. Figure 5. DROPOUT VOLTAGE vs OUTPUT CURRENT OUTPUT VOLTAGE vs TEMPERATURE 1.9 600 VOUT = 1.8 V 400 300 200 +125°C +85°C +25°C -40°C 100 Output Voltage (V) Dropout Voltage (mV) 500 1.85 1.8 1.75 10 mA 500 mA 1.7 0 0 100 200 300 400 500 600 700 800 900 1000 Output Current (mA) Figure 6. Copyright © 2012, Texas Instruments Incorporated -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (°C) Figure 7. Submit Documentation Feedback 5 TLV1171 SBVS177 – APRIL 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VIN = VOUT(TYP) + 1.5 V; IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted. QUIESCENT CURRENT vs OUTPUT CURRENT CURRENT LIMIT vs INPUT VOLTAGE 1.8 600 1.78 1.76 400 300 200 +125°C +85°C +25°C -40°C 100 Current Limit (mA) Quiescent Current (mA) 500 1.74 1.72 1.7 1.68 1.66 1.64 +85°C +25°C -40°C 1.62 1.6 0 0 3.3 3.5 100 200 300 400 500 600 700 800 900 1000 3.7 3.9 4.1 4.3 Figure 8. PSRR vs FREQUENCY PSRR vs FREQUENCY IOUT = 500 mA IOUT = 150 mA IOUT = 30 mA 80 70 60 50 40 30 20 10 VIN - VOUT = 3 V 10 100 1k 10 k 100 k 1M Power-Supply Rejection Ratio (dB) Power-Supply Rejection Ratio (dB) 5.5 5.1 5.3 90 0 IOUT = 500 mA IOUT = 150 mA IOUT = 30 mA 80 70 60 50 40 30 20 10 VIN - VOUT = 1.5 V 0 10 M 10 100 k Figure 11. 1M 10 M SPECTRAL NOISE DENSITY vs FREQUENCY f = 120 Hz f = 10 kHz f = 1 kHz f = 100 kHz 50 f = 1 MHz f = 10 MHz 20 10 Noise Spectral Density (mV/?Hz) 10 70 30 10 k Figure 10. f = 50 Hz 40 1k Frequency (Hz) 80 60 100 Frequency (Hz) PSRR vs OUTPUT CURRENT 90 Power-Supply Rejection Ratio (dB) 4.9 Figure 9. 90 1 0.1 0.01 VIN - VOUT = 1.5 V 0 0.001 0 100 200 300 400 500 600 700 Output Current (mA) Figure 12. 6 4.7 4.5 Input Voltage (V) Output Current (mA) Submit Documentation Feedback 800 900 1000 10 100 1k 10 k 100 k 1M 10 M Frequency (Hz) Figure 13. Copyright © 2012, Texas Instruments Incorporated TLV1171 www.ti.com SBVS177 – APRIL 2012 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VIN = VOUT(TYP) + 1.5 V; IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted. 500 mA LOAD TRANSIENT RESPONSE (200 mA to 500 mA, COUT = 10 μF) VIN = 2.8 V IOUT 200 mA 200 mA/div 200 mA/div LOAD TRANSIENT RESPONSE (200 mA to 500 mA, COUT = 1 μF) 500 mA VIN = 2.8 V IOUT 200 mA 50 mV/div VOUT 50 ms/div Figure 15. LOAD TRANSIENT RESPONSE (1 mA to 500 mA, COUT = 1 μF) LOAD TRANSIENT RESPONSE (1 mA to 500 mA, COUT = 10 μF) VIN = 2.8 V 500 mA IOUT 50 mV/div 1 mA 500 mA/div 50 ms/div Figure 14. VOUT 500 mA IOUT 1 mA VOUT 50 ms/div Figure 16. Figure 17. LOAD TRANSIENT RESPONSE (200 mA to 1 A, COUT = 1 μF) LOAD TRANSIENT RESPONSE (200 mA to 1 A, COUT = 10 μF) 1A IOUT 200 mA 500 mA/div 50 ms/div 100 mV/div 100 mV/div 500 mA/div 50 mV/div 500 mA/div 50 mV/div VOUT VOUT 1A IOUT 200 mA VOUT 50 ms/div 50 ms/div Figure 18. Figure 19. Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 7 TLV1171 SBVS177 – APRIL 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VIN = VOUT(TYP) + 1.5 V; IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted. LOAD TRANSIENT RESPONSE (1 mA to 1 A, COUT = 1 μF) IOUT 100 mV/div 1 mA VOUT 1A 500 mA/div 1A IOUT 1 mA VOUT 50 ms/div Figure 21. LINE TRANSIENT RESPONSE (VOUT = 1.8 V, IOUT = 10 mA) LINE TRANSIENT RESPONSE (VOUT = 1.8 V, IOUT = 500 mA) 4.3 V 3.3 V 5 mV/div VIN 1 V/div 50 ms/div Figure 20. VOUT 4.3 V 3.3 V VIN VOUT 200 ms/div 200 ms/div Figure 22. Figure 23. LINE TRANSIENT RESPONSE (VOUT = 1.8 V, IOUT = 1 A) LINE TRANSIENT RESPONSE (VOUT = 1.8 V, IOUT = 10 mA) 4.3 V 3.3 V 10 mV/div VIN 1 V/div 500 mA/div 100 mV/div 1 V/div 5 mV/div 1 V/div 10 mV/div 8 LOAD TRANSIENT RESPONSE (1 mA to 1 A, COUT = 10 μF) VOUT 5.5 V 3.3 V VIN VOUT 200 ms/div 200 ms/div Figure 24. Figure 25. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated TLV1171 www.ti.com SBVS177 – APRIL 2012 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VIN = VOUT(TYP) + 1.5 V; IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted. 5.5 V 3.3 V VIN 1 V/div LINE TRANSIENT RESPONSE (VOUT = 1.8 V, IOUT = 1 A) 10 mV/div 10 mV/div 1 V/div LINE TRANSIENT RESPONSE (VOUT = 1.8 V, IOUT = 500 mA) VOUT 5.5 V 3.3 V VIN VOUT 200 ms/div 200 ms/div Figure 26. Figure 27. Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 9 TLV1171 SBVS177 – APRIL 2012 www.ti.com APPLICATION INFORMATION The TLV1171 is a low quiescent current linear regulator designed for high-current applications. Unlike typical high-current linear regulators, the TLV1171 consumes significantly less quiescent current. The device delivers excellent line and load transient performance. The TLV1171 is low noise, and exhibits a very good power-supply rejection ratio (PSRR). As a result, the device is ideal for high-current applications that require very sensitive power-supply rails. The TLV1171 regulator offers both current limit and thermal protection. The device operating junction temperature range is –40°C to +125°C. INPUT AND OUTPUT CAPACITOR REQUIREMENTS For stability, 1.0-μF ceramic capacitors are required at the output. Higher-valued capacitors improve transient performance. X5R- and X7R-type ceramic capacitors are recommended because these capacitors have minimal variation in value and equivalent series resistance (ESR) over temperature. Unlike traditional linear regulators that need a minimum ESR for stability, the TLV1171 is ensured to be stable with no ESR. Therefore, costeffective ceramic capacitors can be used with this device. Effective output capacitance that takes bias, temperature, and aging effects into consideration must be greater than 0.5 μF to ensure device stability. Although an input capacitor is not required for stability, it is good analog design practice to connect a 0.1-μF to 1.0-μF, low-ESR capacitor across the IN and GND pins of the regulator. This capacitor counteracts reactive input sources and improves transient response, noise rejection, and ripple rejection. A higher-value capacitor may be necessary if large, fast, rise-time load transients are anticipated, or if the device is not located physically close to the power source. If source impedance is greater than 2 Ω, a 0.1-μF input capacitor may also be necessary to ensure stability. BOARD LAYOUT RECOMMENDATIONS TO IMPROVE PSRR AND NOISE PERFORMANCE Input and output capacitors should be placed as close to the device pins as possible. To improve characteristic ac performance such as PSRR, output noise, and transient response, it is recommended that the board be designed with separate ground planes for VIN and VOUT, with the ground plane connected only at the GND pin of the device. In addition, the output capacitor ground connection should be connected directly to the device GND pin. Higher-value ESR capacitors may degrade PSRR performance. INTERNAL CURRENT LIMIT The TLV1171 internal current limit helps to protect the regulator during fault conditions. During current limit, the output sources a fixed amount of current that is largely independent of the output voltage. In such a case, the output voltage is not regulated and can be calculated by Equation 1: VOUT = ILIMIT ´ RLOAD (1) The PMOS pass transistor dissipates [(VIN – VOUT) × ILIMIT] until thermal shutdown is triggered and the device turns off. As the device cools down, it is turned on by the internal thermal shutdown circuit. If the fault condition continues, the device cycles between current limit and thermal shutdown. See the Thermal Information section for more details. The PMOS pass element in the TLV1171 has a built-in body diode that conducts current when the voltage at OUT exceeds the voltage at IN. This current is not limited; if extended reverse voltage operation is anticipated, external limiting to 5% of the rated output current is recommended. 10 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated TLV1171 www.ti.com SBVS177 – APRIL 2012 DROPOUT VOLTAGE The TLV1171 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output resistance is the RDS(ON) of the PMOS pass element. VDO scales approximately with output current because the PMOS device behaves like a resistor in dropout. As with any linear regulator, PSRR and transient response are degraded as (VIN – VOUT) approaches dropout. TRANSIENT RESPONSE As with any regulator, increasing the size of the output capacitor reduces over- and undershoot magnitude. UNDERVOLTAGE LOCKOUT (UVLO) The TLV1171 uses an undervoltage lockout circuit to keep the output shut off until the internal circuitry operates properly. THERMAL INFORMATION Thermal protection disables the output when the junction temperature rises to approximately +165°C, thus allowing the device to cool. When the junction temperature cools to approximately +145°C, the output circuitry is again enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits dissipation of the regulator, protecting it from damage as a result of overheating. Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate heatsink. For reliable operation, junction temperature should be limited to +125°C (max). To estimate the margin of safety in a complete design (including heatsink), increase the ambient temperature until the thermal protection is triggered; use worst-case loads and signal conditions. The TLV1171 internal protection circuitry has been designed to protect against overload conditions. It is not intended to replace proper heatsinking. Continuously running the TLV1171 into thermal shutdown degrades device reliability. POWER DISSIPATION The ability to remove heat from the die is different for each package type and presents different considerations in the printed circuit board (PCB) layout. The PCB area around the device that is free of other components moves heat from the device to ambient air. Performance data for JEDEC low and high-K boards are given in the Thermal Information table. Using heavier copper increases the effectiveness in removing heat from the device. The addition of plated through-holes to heat-dissipating layers also improves heatsink effectiveness. Power dissipation depends on input voltage and load conditions. Power dissipation (PD) is equal to the product of the output current and voltage drop across the output pass element, as shown in Equation 2: PD = (VIN - VOUT) IOUT (2) Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 11 PACKAGE OPTION ADDENDUM www.ti.com 30-Aug-2012 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing TLV117125DCYR PREVIEW SOT-223 TLV117125DCYT PREVIEW SOT-223 Pins Package Qty DCY 4 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM DCY 4 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 MECHANICAL DATA MPDS094A – APRIL 2001 – REVISED JUNE 2002 DCY (R-PDSO-G4) PLASTIC SMALL-OUTLINE 6,70 (0.264) 6,30 (0.248) 3,10 (0.122) 2,90 (0.114) 4 0,10 (0.004) M 3,70 (0.146) 3,30 (0.130) 7,30 (0.287) 6,70 (0.264) Gauge Plane 1 2 0,84 (0.033) 0,66 (0.026) 2,30 (0.091) 4,60 (0.181) 1,80 (0.071) MAX 3 0°–10° 0,10 (0.004) M 0,25 (0.010) 0,75 (0.030) MIN 1,70 (0.067) 1,50 (0.059) 0,35 (0.014) 0,23 (0.009) Seating Plane 0,08 (0.003) 0,10 (0.0040) 0,02 (0.0008) 4202506/B 06/2002 NOTES: A. B. C. D. All linear dimensions are in millimeters (inches). This drawing is subject to change without notice. Body dimensions do not include mold flash or protrusion. Falls within JEDEC TO-261 Variation AA. 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