CHENMKO ENTERPRISE CO.,LTD CHT5988ZPT SURFACE MOUNT PNP Switching Transistor VOLTAGE 60 Volts CURRENT 5 Ampere APPLICATION * DC/DC converters * Supply line switching * Battery charger * Driver in low supply voltage applications SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * High current (Max.=5A). * Suitable for high packing density. 1.65+0.15 6.50+0.20 0.90+0.05 3.5+0.2 * Low voltage (Max.=60V) . 7.0+0.3 3.00+0.10 * PNP Switching Transistor 0.9+0.2 2.0+0.3 CONSTRUCTION 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 1 1 Base C (3) CIRCUIT 3 2 2 Emitter 3 Collector ( Heat Sink ) (1) B E (2) SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -100 V VCEO collector-emitter voltage open base − -60 V VEBO emitter-base voltage open collector − -6 V IC collector current (DC) − -5 A ICM peak collector current − -15 A IBM peak base current − A Ptot total power dissipation − -1 2.0 Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Tamb ≤ 25 °C; W 2006-7 RATING CHARACTERISTIC CURVES ( CHT5988ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 62.5 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. MIN. MAX. UNIT BVCBO SYMBOL Collector-Base Breakdown Voltage IC= -100uA -100 − V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA -60 − V BVEBO Emitter-Base Breakdown Voltage IE= -100uA -6 − V ICBO Collector Cut-Off Current VCB= -80V − -50 nA IEBO Emitter Cut-Off Current VEB= -6V − -10 nA hFE PARAMETER DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter on Voltage fT Cob Transition Frequency Collector Output Capacitance CONDITIONS VCE= -1V , IC= -10mA 100 − VCE= -1V , IC= -2A 120 300 VCE= -1V , IC= -5A 60 − VCE= -1V , IC= -10A 10 − IC= -100mA , IB= -10mA IC= -1A , IB= -100mA − − -50 -140 IC= -2A , IB= -200mA − − − -210 -460 -1.27 − -1.2 V 100 − MHz pF IC= -5A , IB= -500mA IC= -5A , IB= -500mA VCE= -1V , IC= -5A VCE= -10V , IE= -100mA VCB= -10V , IE= 0A , f=1MHz 72(Typ.) mV V RATING CHARACTERISTIC CURVES ( CHT5988ZPT ) DC Current Gain vs Collector Current Collector Emitter Saturation Voltage vs cOllector Current 1000 VCE = -1V -VCE(sat)䇭䋺䇭COLLECTOR EMITTER SATURATION VOLTAGE ( mV ) hFE䇭䋺䇭DC CURRENT GAIN 1000 100 10 0.01 0.1 1 100 10 1.0 0.01 10 1 10 Transistion Frequencyvs Emitter Current Base Emitter Saturation Voltage vs cOllector Current 10 1000 fT䇭䋺䇭TRANSITION FREQUENCY ( MHz ) -VBE(sat)䇭䋺䇭BASE EMITTER SATURATION VOLTAGE ( mV ) 0.1 -IC䇭䋺䇭COLLECTOR CURRENT ( A ) -IC䇭䋺䇭COLLECTOR CURRENT ( A ) 1.0 0.1 0.01 IC/IB = 10 100 10 0.1 1 -IC䇭䋺䇭COLLECTOR CURRENT ( A ) 10 0.01 0.1 IE䇭䋺䇭EMITTER CURRENT ( A ) 1