NPN 2N1613 – 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO VCER VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage (RBE = 10Ω) Emitter-Base Voltage Collector Current Peak Collector Current PD Total Power Dissipation TJ Junction Temperature TStg Storage Temperature range @ Tcase= 25° @ Tcase= 100° @ Tamb= 25° Value Unit 75 50 7 0.5 1 3 1.7 0.8 200 V V V A A Watts Watts Watts °C -65 to +200 °C THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient COMSET SEMICONDUCTORS Value Unit 58 219 °C/ W °C/ W 1/3 NPN 2N1613 – 2N1711 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEB0 VCBO Ratings DC Current Gain 2N1711 2N1613 Small Signal Current Gain 2N1711 2N1613 hje Input Impedance 2N1711 2N1613 hre Reverse VoltageRatio 2N1711 2N1613 hoe Unit - - 10 nA - - 10 µA 75 - 10 5 - IC=10 mA , RBE=10 Ω 50 - - V IE=100 µA , IC=0 IC=150 mA , IB=15 mA 7 20 35 40 20 35 - 1.5 1.3 120 - V V V 20 - - 20 35 75 100 40 130 75 300 - 35 65 - 30 - 150 70 - 300 - 2.2 - - 4.4 - - 3.6x10-4 - - 7.3x10-4 - - 12.5 - - 23.8 - VCE=60 V, IE=0 VCE=60 V, IE=0, Tamb = 150°C 2N1613 VEB=5 V Emitter Cutoff Current 2N1711 VEB=5 V IC=0.1 mA Collector Base Breakdown Voltage 2N1613 hfe Mx Collector Cutoff Current Collector Emitter Breakdown VCER(*) Voltage Emitter Base Breakdown Voltage VEBO VCE(SAT)(*) Collector-Emitter saturation Voltage VBE(SAT)(*) Base-Emitter saturation Voltage hFE(*) Typ Test Condition(s) Output Admitance 2N1711 IC=150 mA , IB=15 mA IC=0.01 mA , VCE=10 V IC=0.1 mA , VCE=10 V IC=10 mA , VCE=10 V IC=150 mA , VCE=10 V IC=500 mA , VCE=10 V IC=10 mA , VCE=10 V, Tamb=55°C IC=0.01 mA , VCE=10 V IC=0.1 mA , VCE=10 V IC=10 mA , VCE=10 V IC=150 mA , VCE=10 V IC=500 mA , VCE=10 V IC=10 mA , VCE=10 V, Tamb=55°C IC=1 mA , VCE=10 V, f = 1 kHz IC=1 mA , VCE=10 V, f = 1 kHz IC=1 mA , VCE=5 V, f = 1 kHz IC=1 mA , VCE =5 V, f = 1 kHz IC=1 mA , VCE =5 V, f = 1 kHz IC=1 mA , VCE =5 V, f = 1 kHz IC=1 mA , VCE =5 V, f = 1 kHz IC=1 mA , VCE =5 V, f = 1 kHz COMSET SEMICONDUCTORS Min nA V - - kΩ - µS 2/3 NPN 2N1613 – 2N1711 Symbol Ratings Test Condition(s) CCBO CEBO 2N1613 2N1711 Collector-Base Capacitance Emitter-Base Capacitance NF Noise Figure fT IC=50 mA , VCE=10 V, f= 20MHz IC=50 mA , VCE=10 V, f= 20MHz IE= 0 ,VCB= 10 V , f = 1MHz IC= 0 ,VEB= 0.5V , f = 1MHz IC= 0.3 mA , VCE=10 V 2N1613 f = 1 kHz , R9= 510 Ω IC= 0.3 mA , VCE=10 V 2N1711 f = 1 kHz , R9= 510 Ω Transition Frequency Min Typ Mx 60 70 - - 25 80 - - 12 - - 8 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) A B D E F G H I L Pin 1 : Pin 2 : Case : 12.7 5.08 45° typ max - 0.49 6.6 8.5 9.4 1.2 0.9 - Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS MHz pF pF dB (*) Pulse conditions : tp < 300 µs, δ =1%. min Unit 3/3