SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCBO Collector-Base Voltage -VCEO Collector-Emitter Voltage -VEBO Emitter-Base Voltage -IC Collector Current -ICM Collector Peak Current Value BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Page 1 of 5 45 60 80 100 120 45 60 80 100 120 Unit V V 5 V 8 A 12 A SEMICONDUCTORS BD644/646/648/650/652 Symbol Ratings -IB Base Current PT Power Dissipation TJ Junction Temperature Ts @ Tmb < 25° Storage Temperature range BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit 150 mA 62.5 Watts 150 °C -65 to +150 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings RthJ-MB From junction to mounting base RthJ-A From junction to ambient in free air Page 2 of 5 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit 2 K/W 70 K/W SEMICONDUCTORS BD644/646/648/650/652 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) -IE=0,-VCB =-VCEOMAX -ICBO Collector Cutoff Current -IE=0,-VCB =1/2 -VCBOMAX, TJ=150°C -ICEO -IEBO Collector Cutoff Current Emitter Cutoff Current -IE=0, -VCE =1/2 -VCEOMAX -VEB=5 V, -IC=0 -IC=4 A, -IB=16 mA -VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=3 A, -IB=12 mA -IC=5 A, -IB=50 mA -VBE(SAT) Base-Emitter Saturation Voltage (*) -IC=12 A, -IB=50 mA Page 3 of 5 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Min Typ Mx Unit - - 0.1 mA - - 1 mA - - 0.2 mA - - 5.0 mA - - 2 2 2 2 2 2.5 2.5 2.5 2.5 2.5 V - - 3 V SEMICONDUCTORS BD644/646/648/650/652 Symbol -VBE hFE Ratings Base-Emitter Voltage (*) DC Current Gain (*) hfe Small Signal Current Gain ton toff turn-on time turn-off time Value BD644 BD646 -IC=4 A, -VCE=3 V BD648 BD650 BD652 BD644 BD646 -IC=3 A, -VCE=3 V BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=0.5 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=4 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=3 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=8 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=4 A, f=1MHz BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=3 A, f=1MHz BD648 BD650 BD652 -IC=3 A, -IBon= IBoff=12 mA (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% Page 4 of 5 All types 750 750 10 10 10 10 10 - - 2700 - 200 1 5 Unit 2.5 2.5 2.5 2.5 2.5 - V - µs µs SEMICONDUCTORS BD644/646/648/650/652 MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,51 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Anode 1 Anode 2 Gate Page 5 of 5