BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER • • • SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : • TELECOMMUNICATIONS • WIDE BAND UHF AMPLIFIER • RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low reverse capacitance, excellent cross modulation properties and very low noise performance. The BFY90 is complementary to the BFR99A. Typical applications include telecommunication and radio communication equipment. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage ( IB = 0) 15 V VCER Collector-Emitter Voltage ( RBE ≤50Ω ) 30 V VCBO Collector-Base Voltage ( IE= 0) 30 V VEBO Collector-Base Voltage ( IC = 0) 2.5 V IC Collector Current 25 mA ICM Collector Peak Current 50 mA Ptot Total Power Dissipation at Tamb ≤ 25 °C 200 mW Tstg, Tj Storage and Junction Temperature -65 to 200 °C COMSET SEMICONDUCTORS 1/4 BFX89 BFY90 THERMAL CHARACTERISTICS Symbol RthJ-C RthJ- Ratings Thermal Resistance, Junction – Case Thermal Resistance, Junction – ambient Max Max Value Unit 580 880 °C/W °C/W ELECTRICAL CHARACTERISTICS Tamb = 25°C unless otherwise specified Symbol ICBO VCEK* fT Ratings Collector Cutoff Current (IE=0) Collector-emitter Knee Voltage - - 10 nA IC = 20mA - - 0.75 V BFX89 - 1 - BFY90 1 1.1 - BFX89 - 1.2 - BFY90 1.3 1.4 - BFX89 20 - 150 BFY90 25 - 150 BFX89 20 - 125 BFY90 25 - 125 IE =0 VCB = 10V Collector-base Capacitance f= 1MHZ VCE= 5 BFX89 - - 1.7 BFY90 - - 1.5 IC= 2mAV f = 1MHZ BFX89 - 0.6 - BFY90 - 0.6 0.8 Transition Frequency VCE = 5V f = 500MHZ IC =2 mA VCE = 5V f = 500MHZ IC =25 mA Cre(2) GHz DC Current Gain IC= 25mA VCE= 1 V CCBO(1) Mx Unit VCB = 15V IC= 2mA VCE= 1 V hFE Min Typ Test Condition(s) Reverse Capacitance COMSET SEMICONDUCTORS pF pF 2/4 BFX89 BFY90 Symbol Ratings Test Condition(s) Min Typ Mx BFY90 Only - - 4 IC= 2mA , VCE= 5 V f= 200 MHz Rg = Optimized BFX89 - 3.3 4 BFY90 - 2.5 3.5 IC= 2mA , VCE= 5 V f = 500 MHz Rg = 50 Ω BFX89 - - 6.5 BFY90 - - 5 BFX89 - 7 - BFY90 - 5.5 - f=200 MHz 19 22 - f=800 MHz - 7 - f=200 MHz 21 23 - f=800 MHz - 8 - For BFX89 IC=8mA VCE= 10 V Dim = -30 dB (3) Channel 9 - 6 - (4) Channel 62 - 6 For BFY90 IC=14mA VCE= 10 V Dim = -30 dB (3) Channel 9 10 12 - (4) Channel 62 - 12 - IC= 2mA , VCE= 5 V f = 100KHz Rg = Optimized NF(2) Noise Figure IC= 2mA , VCE= 5 V f = 800 MHz Rg = Optimized Gpe (2) Po Power Gain ( not neutralized) Output Power For BFX89 IC= 8mA VCE= 10 V For BFY90 IC= 14mA VCE= 10 V dB dB mW * IB = value for which IC =22 mA at VCE = 1V (1) Shield lead not grounded (3) fp = 202MHZ, fq = 205 MHZ, f(2q-p) = 208MHZ (2) Shield lead grounded (4) fp = 798MHZ, fq = 802 MHZ, f(2q-p) = 806MHZ COMSET SEMICONDUCTORS Unit 3/4 BFX89 BFY90 MECHANICAL DATA CASE TO-72 Pin 1 : Pin 2 : Pin 3 : Pin 4 : Emitter Base Collector Case COMSET SEMICONDUCTORS 4/4