COMSET BUV27A

SEMICONDUCTORS
BUV27 – BUV27A
SILICON POWER TRANSISTORS
High-speed,NPN power transistors in a TO-220 envelope. They are intended for
fast switching applications such as high frequency and efficiency converters,
switching regulators and motor control.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCESM
Collector-Emitter Voltage
Peak value ; VBE=0
VCEO
Collector-Emitter Voltage
VCEsat
Collector-Emitter Saturation Voltage
ICsat
Collector Current Saturation
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
IBM
Base Current
Symbol
Value
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
Ratings
Pt
Power Dissipation
Tj
Junction Temperature
Ts
Storage Temperature range
@ Tmb < 25°
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
240
300
120
150
1.5
1
8
7
Unit
V
V
V
A
15
A
25
A
4
A
6
A
Value
Unit
65
Watts
150
°C
-65 to +150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
Ratings
From junction to mounting base
Page 1 of 3
BUV27
BUV27A
Value
Unit
1.92
K/W
SEMICONDUCTORS
BUV27 – BUV27A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICEX
Collector Cutoff Current (*)
VCE =VCESMAX, VBE= -1.5V
TJ=125°C
ICER
Collector Cutoff Current
VCE =VCESMAX, RBE= 50 Ω
TJ=125°C
IEBO
Emitter Cutoff Current
VEB=5 V, IC=0
VCE0sust
Collector-Emitter Sustaining
IB=0 , IC= 0.2A , L = 25mH
Voltage
VCE(SAT)
Collector-Emitter saturation
Voltage
VBE(SAT)
Base-Emitter Saturation
Voltage
Symbol
IC=8 A, IB=800 mA
IC=7 A, IB=700 mA
IC=4 A, IB=400 mA
IC=3.5 A, IB=350 mA
IC=8 A, IB=800 mA
IC=7 A, IB=700 mA
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
Min Typ Mx Unit
-
-
1
mA
-
-
3
mA
-
-
1
MA
120
150
-
-
1.5
1.5
0.7
0.7
2.0
2.0
Ratings
ton
turn-on time
toff
turn-off time
tf
Fall time
ICon=8 A, IBon= 800 mA ;
IBoff=2 Ibon ; VCE= 50 V
(*) Mesured with a half-sinewave voltage (curve tracer).
Page 2 of 3
Value
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
V
V
V
Unit
-
0.4
0.8
µs
-
0.5
1.2
µs
-
0.12
0.4
µs
SEMICONDUCTORS
BUV27 – BUV27A
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Pin 1 :
Pin 2 :
Pin 3 :
9,86
15,73
13,37
6,67
4,44
4,21
2,99
17,21
1,29
3,6
1,36
0,46
2,1
5
2,51
0,79
inches
0,39
0,62
0,52
0,26
0,17
0,16
0,11
0,68
0,05
0,14
0,05
0,02
0,08
0,19
0,098
0,03
Anode 1
Anode 2
Gate
Page 3 of 3