SEMICONDUCTORS BUV27 – BUV27A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCESM Collector-Emitter Voltage Peak value ; VBE=0 VCEO Collector-Emitter Voltage VCEsat Collector-Emitter Saturation Voltage ICsat Collector Current Saturation IC Collector Current ICM Collector Peak Current IB Base Current IBM Base Current Symbol Value BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A Ratings Pt Power Dissipation Tj Junction Temperature Ts Storage Temperature range @ Tmb < 25° BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A 240 300 120 150 1.5 1 8 7 Unit V V V A 15 A 25 A 4 A 6 A Value Unit 65 Watts 150 °C -65 to +150 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings From junction to mounting base Page 1 of 3 BUV27 BUV27A Value Unit 1.92 K/W SEMICONDUCTORS BUV27 – BUV27A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICEX Collector Cutoff Current (*) VCE =VCESMAX, VBE= -1.5V TJ=125°C ICER Collector Cutoff Current VCE =VCESMAX, RBE= 50 Ω TJ=125°C IEBO Emitter Cutoff Current VEB=5 V, IC=0 VCE0sust Collector-Emitter Sustaining IB=0 , IC= 0.2A , L = 25mH Voltage VCE(SAT) Collector-Emitter saturation Voltage VBE(SAT) Base-Emitter Saturation Voltage Symbol IC=8 A, IB=800 mA IC=7 A, IB=700 mA IC=4 A, IB=400 mA IC=3.5 A, IB=350 mA IC=8 A, IB=800 mA IC=7 A, IB=700 mA BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A Min Typ Mx Unit - - 1 mA - - 3 mA - - 1 MA 120 150 - - 1.5 1.5 0.7 0.7 2.0 2.0 Ratings ton turn-on time toff turn-off time tf Fall time ICon=8 A, IBon= 800 mA ; IBoff=2 Ibon ; VCE= 50 V (*) Mesured with a half-sinewave voltage (curve tracer). Page 2 of 3 Value BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A V V V Unit - 0.4 0.8 µs - 0.5 1.2 µs - 0.12 0.4 µs SEMICONDUCTORS BUV27 – BUV27A MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,51 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Anode 1 Anode 2 Gate Page 3 of 3