DC COMPONENTS CO., LTD. DMBT9015 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in pre-amplifier of low level and low noise. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating .091(2.30) .067(1.70) Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .108(0.65) .089(0.25) 2 .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical oCharacteristics (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -50 - - V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -45 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-100µA, IC=0 ICBO - - -50 nA VCB=-50V, IE=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage IEBO - - -50 nA VEB=-5V, IC=0 VCE(sat) - - -0.7 V IC=-100mA, IB=-5mA VBE(sat) - - -1 V IC=-100mA, IB=-5mA (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width Test Conditions hFE 200 - 1000 - IC=-1mA, VCE=-5V fT 100 - - MHz IC=-10mA, VCE=-5V 380µs, Duty Cycle Classification of hFE Rank L H Range 200~450 450~1000 2%