DC COMPONENTS CO., LTD. 2SD965 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as AF output amplifier and flash unit. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating .022(0.56) .014(0.36) Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 7 V Collector Current IC 5 A Total Power Dissipation PD 750 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 40 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 7 - - V IE=10µA, IC=0 IC=100µA, IE=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=10V, IE=0 Emitter Cutoff Current IEBO - - 0.1 µA VEB=7V, IC=0 VCE(sat) - 0.35 1 V IC=3A, IB=100mA (1) Collector-Emitter Saturation Voltage (1) DC Current Gain hFE1 230 - 800 - IC=0.5A, VCE=2V hFE2 150 - - - IC=2A, VCE=2V Transition Frequency fT - 150 - MHz Output Capacitance Cob - - 50 pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE1 Rank Q R S Range 230~380 340~600 560~800 IE=50mA, VCE=6V VCB=20V, f=1MHz, IE=0