DC COMPONENTS CO., LTD. R DY227 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 300 mA Total Power Dissipation PD 400 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Collector-Base Breakdown Volatge BVCBO 30 - Collector-Emitter Breakdown Voltage BVCEO 25 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 ICBO - - 100 nA VCB=25V, IE=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage DC Current Gain(1) (1)Pulse Test: Pulse Width Max - Unit V Test Conditions IC=100µA, IE=0 IEBO - - 100 nA VEB=3V, IC=0 VCE(sat) - - 400 mV IC=300mA, IB=30mA 70 - 400 - hFE 380µs, Duty Cycle 2% Classification of hFE Rank O Y G Range 70~140 120~240 200~400 IC=50mA, VCE=1V