DC COMPONENTS CO., LTD. 2SD880 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit VCBO 60 V Collector-Base Voltage Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V IC 3 A Collector Current Base Current IB 0.5 A Total Power Dissipation PD 1.5 W Total Power Dissipation(TC=25 C) PD 30 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) .625(15.87) .570(14.48) .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 60 - - V Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC=50mA, IB=0 ICBO - - 0.1 mA VCB=60V, IE=0 Collector Cutoff Current Emitter Cutoff Current Test Conditions IC=1mA, IE=0 IEBO - - 0.1 mA Collector-Emitter Saturation Voltage(1) VCE(sat) - - 1 V IC=3A, IB=0.3A Base-Emitter On Voltage(1) VBE(on) - - 1 V IC=0.5A, VCE=5V hFE 60 - 300 - IC=0.5A, VCE=5V fT - 3 - MHz IC=0.5A, VCE=5V (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE Rank O Y GR Range 60~120 100~200 150~300 VEB=7V, IC=0