DC COMPONENTS CO., LTD. 2SC1213 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 4 V Collector Current IC 500 mA Total Power Dissipation PD 400 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 50 - - V Collector-Emitter Breakdown Voltage BVCEO 50 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 4 - - V IE=10µA, IC=0 ICBO - - 0.5 µA VCB=20V, IE=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width Test Conditions IC=100µA, IE=0 IEBO - - 0.5 µA VEB=5V, IC=0 VCE(sat) - - 0.6 V IC=150mA, IB=15mA VBE(sat) - - 1.2 V IC=150mA, IB=15mA hFE1 60 - 320 - IC=10mA, VCE=3V hFE2 35 - - - IC=500mA, VCE=3V 100 160 - MHz IC=20mA, VCE=6V fT 380µs, Duty Cycle 2% Classification of hFE1 Rank B C D Range 60~120 100~200 160~320