DCCOM 2SD667A

DC COMPONENTS CO., LTD.
2SD667A
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier
applications.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Emitter
2 = Collector
3 = Base
o
2 Typ
.190(4.83)
.170(4.33)
o
2 Typ
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Symbol
Rating
Unit
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (DC)
IC
1
A
IC
2
A
PD
900
mW
TJ
+150
Storage Temperature
TSTG
-55 to +150
o
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
3 2 1
Total Power Dissipation
Junction Temperature
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
Collector Current (pulse)
o
.500
Min
(12.70)
.148(3.76)
.132(3.36)
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
120
-
-
V
IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO
100
-
-
V
IC=1mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
V
IE=10µA, IC=0
ICBO
-
-
10
µA
VCB=100V, IE=0
Collector Cutoff Current
(1)
Collector-Emitter Saturation Voltage
(1)
Base-Emitter On Voltage
DC Current Gain(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
VCE(sat)
-
-
1
V
IC=500mA, IB=50mA
VBE(on)
-
-
1.5
V
IC=150mA, VCE=5V
hFE1
60
-
200
-
IC=150mA, VCE=5V
hFE2
30
-
-
-
IC=500mA, VCE=5V
fT
-
140
-
MHz
IC=150mA, VCE=5V
-
12
-
pF
Cob
380µs, Duty Cycle
Classification of hFE
Rank
B
C
Range
60~120
100~200
Test Conditions
2%
VCB=10V, f=1MHz, IE=0