DC COMPONENTS CO., LTD. 2SD667A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Symbol Rating Unit VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 1 A IC 2 A PD 900 mW TJ +150 Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 Total Power Dissipation Junction Temperature .022(0.56) .014(0.36) .050 Typ (1.27) Collector Current (pulse) o .500 Min (12.70) .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 120 - - V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 ICBO - - 10 µA VCB=100V, IE=0 Collector Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter On Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width VCE(sat) - - 1 V IC=500mA, IB=50mA VBE(on) - - 1.5 V IC=150mA, VCE=5V hFE1 60 - 200 - IC=150mA, VCE=5V hFE2 30 - - - IC=500mA, VCE=5V fT - 140 - MHz IC=150mA, VCE=5V - 12 - pF Cob 380µs, Duty Cycle Classification of hFE Rank B C Range 60~120 100~200 Test Conditions 2% VCB=10V, f=1MHz, IE=0