DC COMPONENTS CO., LTD. DMBT8550 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Symbol Rating Collector-Base Voltage Characteristic VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Total Power Dissipation PD 225 mW .091(2.30) .067(1.70) Unit Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -25 - - V IC=-10µA Collector-Emitter Breakdown Voltage BVCEO -20 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA ICBO - - -1 µA VCB=-20V Collector Cutoff Current Test Conditions IEBO - - -0.1 µA VEB=-3V Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.6 V IC=-500mA, IB=-50mA Base-Emitter Saturation Voltage(1) VBE(sat) - - -1.2 V IC=-500mA, IB=-50mA Emitter Cutoff Current (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width hFE 120 - 400 - fT 150 - - MHz 380µs, Duty Cycle 2% Classification of hFE Rank C D E Range 120~200 150~350 250~400 IC=-50mA, VCE=-1V IC=-20mA, VCE=-10V, f=100MHz