DCCOM DMBTH10

DC COMPONENTS CO., LTD.
R
DMBTH10
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in VHF & UHF oscillators and VHF
mixer in tuner of a TV receiver.
SOT-23
.020(0.50)
.012(0.30)
Pinning
1 = Base
2 = Emitter
3 = Collector
3
.108(0.65)
.089(0.25)
.063(1.60)
.055(1.40)
1
2
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
3
V
Collector Current
IC
50
mA
Total Power Dissipation
PD
225
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.0043(0.11)
.0035(0.09)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
C
.004
Max
(0.10)
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
BVCBO
20
-
-
V
Test Conditions
Collector-Emitter Breakdown Voltage
BVCEO
15
-
-
V
IC=1mA
Emitter-Base Breakdown Volatge
BVEBO
3
-
-
V
IC=10µA
IC=100µA
Collector Cutoff Current
ICBO
-
-
100
nA
VCB=20V
Emitter Cutoff Current
IEBO
-
-
100
nA
VEB=2V
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
-
0.5
V
IC=4mA, IB=0.4mA
Base-Emitter On Voltage
VBE(on)
-
-
0.95
V
IC=4mA, VCE=10V
hFE
60
-
-
-
IC=4mA, VCE=10V
Transition Frequency
fT
650
-
-
MHz
Output Capacitance
Cob
-
-
0.7
pF
DC Current Gain(1)
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
IC=4mA, VCB=10V, f=100MHz
VCB=10V, f=1MHz