DC COMPONENTS CO., LTD. R DMBTH10 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 3 V Collector Current IC 50 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 20 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 15 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 3 - - V IC=10µA IC=100µA Collector Cutoff Current ICBO - - 100 nA VCB=20V Emitter Cutoff Current IEBO - - 100 nA VEB=2V Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.5 V IC=4mA, IB=0.4mA Base-Emitter On Voltage VBE(on) - - 0.95 V IC=4mA, VCE=10V hFE 60 - - - IC=4mA, VCE=10V Transition Frequency fT 650 - - MHz Output Capacitance Cob - - 0.7 pF DC Current Gain(1) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% IC=4mA, VCB=10V, f=100MHz VCB=10V, f=1MHz