DC COMPONENTS CO., LTD. BC237 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of audio amplifiers. TO-92 Pinning .190(4.83) .170(4.33) 1 = Collector 2 = Base 3 = Emitter o 2 Typ .190(4.83) .170(4.33) o 2 Typ Absolute Maximum Ratings(TA=25oC) Characteristic .500 Min (12.70) Symbol Rating Unit VCES 50 V VCEO 45 V Collector-Emitter Voltage VEBO 5 V Collector Current Emitter-Base Voltage IC 100 mA Total Power Dissipation PD 350 mW Junction Temperature TJ +150 o -55 to +150 o Storage Temperature TSTG .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C C Dimensions in inches and (millimeters) Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Symbol Min Typ Max Unit BVCES 50 - - V IC=100µA, VEB=0 Test Conditions BVCEO 45 - - V IC=2mA, IB=0 BVEBO 6 - - V IE=100µA, IC=0 ICES - - 15 nA VCB=50V, IE=0 IEBO - - 100 nA VEB=4V, IC=0 VCE(sat)1 - - 0.2 V IC=10mA, IB=0.5mA VCE(sat)2 - - 0.6 V IC=100mA, IB=5mA VBE(sat)1 - - 1.05 V IC=100mA, IB=5mA VBE(sat)2 - - 0.83 V IC=10mA, IB=0.5mA VBE(on) 0.55 - 0.7 V IC=2mA, VCE=5V hFE1 50 - - - IC=10µA, VCE=5V hFE2 120 - 800 - IC=2mA, VCE=5V hFE3 60 - - - fT 150 - - MHz - - 4.5 pF Cob 380µs, Duty Cycle 2% Classification of hFE2 Rank A B C Range 120~220 180~460 300~800 IC=100mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, IE=0, f=1MHz