DCCOM BC237

DC COMPONENTS CO., LTD.
BC237
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of audio amplifiers.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Collector
2 = Base
3 = Emitter
o
2 Typ
.190(4.83)
.170(4.33)
o
2 Typ
Absolute Maximum Ratings(TA=25oC)
Characteristic
.500
Min
(12.70)
Symbol
Rating
Unit
VCES
50
V
VCEO
45
V
Collector-Emitter Voltage
VEBO
5
V
Collector Current
Emitter-Base Voltage
IC
100
mA
Total Power Dissipation
PD
350
mW
Junction Temperature
TJ
+150
o
-55 to +150
o
Storage Temperature
TSTG
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
3 2 1
.148(3.76)
.132(3.36)
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
(1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
DC Current Gain(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
Symbol
Min
Typ
Max
Unit
BVCES
50
-
-
V
IC=100µA, VEB=0
Test Conditions
BVCEO
45
-
-
V
IC=2mA, IB=0
BVEBO
6
-
-
V
IE=100µA, IC=0
ICES
-
-
15
nA
VCB=50V, IE=0
IEBO
-
-
100
nA
VEB=4V, IC=0
VCE(sat)1
-
-
0.2
V
IC=10mA, IB=0.5mA
VCE(sat)2
-
-
0.6
V
IC=100mA, IB=5mA
VBE(sat)1
-
-
1.05
V
IC=100mA, IB=5mA
VBE(sat)2
-
-
0.83
V
IC=10mA, IB=0.5mA
VBE(on)
0.55
-
0.7
V
IC=2mA, VCE=5V
hFE1
50
-
-
-
IC=10µA, VCE=5V
hFE2
120
-
800
-
IC=2mA, VCE=5V
hFE3
60
-
-
-
fT
150
-
-
MHz
-
-
4.5
pF
Cob
380µs, Duty Cycle
2%
Classification of hFE2
Rank
A
B
C
Range
120~220
180~460
300~800
IC=100mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, IE=0, f=1MHz