DC COMPONENTS CO., LTD. BC547 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of audio amplifier. TO-92 Pinning .190(4.83) .170(4.33) 1 = Collector 2 = Base 3 = Emitter o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6 V Collector Current IC 100 mA mW Total Power Dissipation PD 500 Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 50 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 45 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA, IC=0 ICBO - - 15 nA VCB=30V, IE=0 VCE(sat)1 - - 0.25 V IC=10mA, IB=0.5mA Collector Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage Base-Emitter On Voltage VCE(sat)2 - - 0.6 V IC=100mA, IB=5mA VBE(sat)1 - 0.7 - V IC=10mA, IB=0.5mA VBE(sat)2 - 0.9 - V IC=100mA, IB=5mA VBE(on)1 0.58 - 0.7 V IC=2mA, VCE=5V VBE(on)2 - - 0.77 V IC=10mA, VCE=5V (1) hFE 110 - 800 - Transition Frequency DC Current Gain fT - 300 - MHz Output Capacitance Cob - - 4.5 pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE Rank A B C Range 110~220 200~450 420~800 IC=2mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCE=10V, f=1MHz, IE=0