DC COMPONENTS CO., LTD. DXTD882 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for the output stage of 0.75W audio, voltage regulator, and relay driver. SOT-89 Pinning .063(1.60) .055(1.40) .066(1.70) .059(1.50) 1 = Base 2 = Collector 3 = Emitter .102(2.60) .095(2.40) .167(4.25) .159(4.05) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG 1 Rating 40 30 5 3 1.5 +150 -55 to +150 Unit V V V A W o C o C .020(0.51) .014(0.36) 2 3 .060(1.52) .058(1.48) .016(0.41) .014(0.35) .120(3.04) .117(2.96) .181(4.60) .173(4.40) Dimensions in inches and (millimeters) Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 40 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 IC=100µA, IE=0 Collector Cutoff Current ICBO - - 1 µA VCB=30V, IE=0 Emitter Cutoff Current IEBO - - 1 µA VEB=3V, IB=0 VCE(sat) - - 0.5 V IC=2A, IB=0.2A Collector-Emitter Saturation Voltage(1) (1) Base-Emitter Saturation Voltage DC Current Gain(1) VBE(sat) - - 2 V IC=2A, IB=0.2A hFE1 30 - - - IC=20mA, VCE=2V hFE2 100 - 500 - Transition Frequency fT - 90 - MHz Output Capacitance Cob - 45 - pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle Classification of hFE2 Rank Q P E Range 100~200 160~320 250~500 2% IC=1A, VCE=2V IC=0.1A, VCE=5V, f=100MHz VCB=10V, f=1MHz, IE=0