DC COMPONENTS CO., LTD. 2SA733 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier applicatioms. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o Absolute Maximum Ratings(TA=25 Characteristic 2 Typ o C) Symbol Rating .500 Min (12.70) Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Base Current IB -20 mA Total Power Dissipation PD 250 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO -60 - - V Test Conditions Collector-Emitter Breakdown Volatge BVCEO -50 - - V IE=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA, IC=0 IC=-100µA, IE=0 Collector Cutoff Current ICBO - - -0.1 µA VCB=-60V, IE=0 Emitter Cutoff Current IEBO - - -0.1 µA VEB=-5V, IC=0 Collector-Emitter Saturation Voltage (1) VCE(sat) - -0.18 -0.3 V IC=-100mA, IB=-10mA VBE(on) -0.55 -0.62 -0.7 V IC=-1mA, VCE=-6V hFE 90 200 600 - IC=-1mA, VCE=-6V Transition Frequency fT 100 180 - MHz Output Capacitance Cob - 4.5 6 pF Base-Emitter On Voltage DC Current Gain(1) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE Rank R Q P K Range 90~180 135~270 200~400 300~600 IC=-10mA, VCE=-6V VCB=-10V, IE=0, f=1MHz