DC COMPONENTS CO., LTD. R 2SC945 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o Absolute Maximum Ratings(TA=25 Characteristic 2 Typ o C) Symbol Rating .500 Min (12.70) Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Base Current IB 50 mA Total Power Dissipation PD 250 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 60 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 50 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 IC=100µA, IE=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=60V, IE=0 Emitter Cutoff Current IEBO - - 0.1 µA VEB=5V, IB=0 VCE(sat) - 0.1 0.3 V IC=100mA, IB=10mA Collector-Emitter Saturation Voltage(1) hFE1 50 - - - IC=0.1mA, VCE=6V hFE2 135 - 600 - IC=1mA, VCE=6V Transition Frequency fT 150 - 600 MHz Output Capacitance Cob - - 4 pF DC Current Gain(1) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE2 Rank Q P K Range 135~270 200~400 300~600 IC=10mA, VCE=6V, f=100MHz VCB=10V, f=1MHz, IE=0