DC COMPONENTS CO., LTD. 2SC1815 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating .500 Min (12.70) Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Total Power Dissipation PD 400 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 60 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 50 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 ICBO - - 100 nA VCB=60V, IE=0 IEBO - - 100 nA VEB=5V, IC=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width VCE(sat) - - 0.25 V IC=100mA, IB=10mA VBE(sat) - - 1 V IC=100mA, IB=10mA hFE1 70 - 700 - IC=2mA, VCE=6V hFE2 25 - - - IC=150mA, VCE=6V fT 80 - - MHz IC=1mA, VCE=10V - - 3.5 pF Cob 380µs, Duty Cycle 2% Classification of hFE1 Rank O Y GR BL Range 70~140 120~240 200~400 350~700 VCB=10V, f=1MHz, IE=0