DC COMPONENTS CO., LTD. BC557 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of audio amplifiers. TO-92 Pinning .190(4.83) .170(4.33) 1 = Collector 2 = Base 3 = Emitter o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Total Power Dissipation PD 500 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO -50 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO -45 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA IC=-100µA Collector Cutoff Current ICBO - - -0.1 µA VCB=-20V Emitter Cutoff Current IEBO - - -1 µA VEB=-5V VCE(sat)1 - - -300 mV IC=-10mA, IB=-1mA Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) VCE(sat)2 - - -650 mV IC=-100mA, IB=-10mA VBE(on)1 -600 - -750 mV IC=-2mA, VCE=-5V VBE(on)2 - - -820 mV IC=-10mA, VCE=-5V hFE 75 - 800 - IC=-2mA, VCB=-5V fT - 300 - MHz - 4.5 - pF (1) Transition Frequency Output Capacitance Cob (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE Rank A B C Range 75~260 220~500 420~800 IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz, IE=0