DCCOM BC546

DC COMPONENTS CO., LTD.
BC546
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of audio amplifiers.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Collector
2 = Base
3 = Emitter
o
2 Typ
.190(4.83)
.170(4.33)
o
2 Typ
.500
Min
(12.70)
Absolute Maximum Ratings(TA=25oC)
Symbol
Rating
Unit
Collector-Base Voltage
Characteristic
VCBO
80
V
Collector-Emitter Voltage
VCEO
65
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
100
mA
Total Power Dissipation
PD
625
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
3 2 1
.148(3.76)
.132(3.36)
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
80
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
65
-
-
V
IC=1mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
V
IE=10µA, IC=0
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(1)
(1)
Base-Emitter On Voltage
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
Test Conditions
IC=100µA, IE=0
ICBO
-
-
15
nA
VCB=30V, IE=0
VCE(sat)1
-
-
250
mV
IC=10mA, IB=0.5mA
VCE(sat)2
-
-
600
mV
IC=100mA, IB=5mA
VBE(sat)1
-
700
-
mV
IC=10mA, IB=0.5mA
VBE(sat)2
-
900
-
mV
IC=100mA, IB=5mA
VBE(on)1
-
-
770
mV
IC=10mA, VCE=5V
VBE(on)2
580
-
700
mV
IC=2mA, VCE=5V
hFE
110
-
800
-
IC=2mA, VCE=5V
-
300
-
MHz
-
-
4.5
pF
fT
Cob
380µs, Duty Cycle
2%
Classification of hFE
Rank
A
B
C
Range
110~220
200~450
420~800
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz, IE=0