DC COMPONENTS CO., LTD. BC546 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of audio amplifiers. TO-92 Pinning .190(4.83) .170(4.33) 1 = Collector 2 = Base 3 = Emitter o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 80 V Collector-Emitter Voltage VCEO 65 V Emitter-Base Voltage VEBO 6 V Collector Current IC 100 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 80 - - V Collector-Emitter Breakdown Voltage BVCEO 65 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA, IC=0 Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) (1) Base-Emitter On Voltage DC Current Gain (1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IC=100µA, IE=0 ICBO - - 15 nA VCB=30V, IE=0 VCE(sat)1 - - 250 mV IC=10mA, IB=0.5mA VCE(sat)2 - - 600 mV IC=100mA, IB=5mA VBE(sat)1 - 700 - mV IC=10mA, IB=0.5mA VBE(sat)2 - 900 - mV IC=100mA, IB=5mA VBE(on)1 - - 770 mV IC=10mA, VCE=5V VBE(on)2 580 - 700 mV IC=2mA, VCE=5V hFE 110 - 800 - IC=2mA, VCE=5V - 300 - MHz - - 4.5 pF fT Cob 380µs, Duty Cycle 2% Classification of hFE Rank A B C Range 110~220 200~450 420~800 IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz, IE=0