DC COMPONENTS CO., LTD. R DXT3904 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-89 Pinning .063(1.60) .055(1.40) .066(1.70) .059(1.50) 1 = Base 2 = Collector 3 = Emitter Characteristic .102(2.60) .095(2.40) .167(4.25) .159(4.05) Absolute Maximum Ratings(TA=25oC) Symbol Rating 1 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power Dissipation PD 1 .020(0.51) .014(0.36) Junction Temperature TJ +150 Storage Temperature TSTG -55 to +150 o 3 .060(1.52) .058(1.48) .016(0.41) .014(0.35) .120(3.04) .117(2.96) .181(4.60) .173(4.40) W o 2 C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 60 - - V Collector-Emitter Breakdown Voltage BVCEO 40 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Test Conditions IC=100µA ICEX - - 50 nA VCE=30V, VBE=3V VCE(sat)1 - - 0.2 V IC=10mA, IB=1mA VCE(sat)2 - - 0.3 V IC=50mA, IB=5mA VBE(sat)1 0.65 - 0.85 V IC=10mA, IB=1mA VBE(sat)2 - - 0.95 V IC=50mA, IB=5mA hFE1 40 - - - IC=100µA, VCE=1V hFE2 70 - - - IC=1mA, VCE=1V hFE3 100 - 300 - IC=10mA, VCE=1V hFE4 60 - - - IC=50mA, VCE=1V hFE5 30 - - - IC=100mA, VCE=1V Transition Frequency fT 300 - - MHz Output Capacitance Cob - - 4 pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% VCE=20V, f=100MHz, IC=10mA VCB=5V, f=1MHz