DCCOM DXT3904

DC COMPONENTS CO., LTD.
R
DXT3904
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and
amplifier applications.
SOT-89
Pinning
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
1 = Base
2 = Collector
3 = Emitter
Characteristic
.102(2.60)
.095(2.40)
.167(4.25)
.159(4.05)
Absolute Maximum Ratings(TA=25oC)
Symbol
Rating
1
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Total Power Dissipation
PD
1
.020(0.51)
.014(0.36)
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 to +150
o
3
.060(1.52)
.058(1.48)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
W
o
2
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
60
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
40
-
-
V
IC=1mA
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
V
IE=10µA
Collector Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
DC Current Gain(1)
Test Conditions
IC=100µA
ICEX
-
-
50
nA
VCE=30V, VBE=3V
VCE(sat)1
-
-
0.2
V
IC=10mA, IB=1mA
VCE(sat)2
-
-
0.3
V
IC=50mA, IB=5mA
VBE(sat)1
0.65
-
0.85
V
IC=10mA, IB=1mA
VBE(sat)2
-
-
0.95
V
IC=50mA, IB=5mA
hFE1
40
-
-
-
IC=100µA, VCE=1V
hFE2
70
-
-
-
IC=1mA, VCE=1V
hFE3
100
-
300
-
IC=10mA, VCE=1V
hFE4
60
-
-
-
IC=50mA, VCE=1V
hFE5
30
-
-
-
IC=100mA, VCE=1V
Transition Frequency
fT
300
-
-
MHz
Output Capacitance
Cob
-
-
4
pF
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
VCE=20V, f=100MHz, IC=10mA
VCB=5V, f=1MHz