Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free Option Available • TrenchFET® Power MOSFETs RoHS • • • • 2000 V ESD Protection Very Small Footprint High-Side Switching Low On-Resistance: N-Channel, 0.7 Ω P-Channel, 1.2 Ω • Low Threshold: ± 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation COMPLIANT BENEFITS • • • • • SOT-563 SC-89 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: A Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS • • • • Top V iew Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Ordering Information: Si1016X-T1-E3 (Lead (Pb)-free) Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Currentb TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS PD P-Channel Steady State 5s 20 Steady State Unit - 20 V ±6 515 485 - 390 - 370 370 350 - 280 - 265 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID 5s 650 mA - 650 450 380 - 450 - 380 280 250 280 250 145 130 145 130 mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71168 S-80427-Rev. D, 03-Mar-08 www.vishay.com 1 Si1016X Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On State Drain Currenta Drain-Source On-State Resistancea VGS(th) IGSS IDSS ID(on) RDS(on) Forward Transconductancea gfs Diode Forward Voltagea VSD VDS = VGS, ID = 250 µA N-Ch 0.45 1 VDS = VGS, ID = - 250 µA P-Ch - 0.45 -1 N-Ch ± 0.5 ± 1.0 P-Ch ± 1.0 ± 2.0 VDS = 16 V, VGS = 0 V N-Ch 0.3 100 VDS = - 16 V, VGS = 0 V P-Ch - 0.3 - 100 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch -5 VDS = 0 V, VGS = ± 4.5 V VDS = 5 V, VGS = 4.5 V N-Ch 700 VDS = - 5 V, VGS = - 4.5 V P-Ch - 700 VGS = 4.5 V, ID = 600 mA N-Ch 0.41 VGS = - 4.5 V, ID = - 350 mA P-Ch 0.80 1.2 VGS = 2.5 V, ID = 500 mA N-Ch 0.53 0.85 VGS = - 2.5 V, ID = - 300 mA P-Ch 1.20 1.6 VGS = 1.8 V, ID = 350 mA V µA nA µA mA 0.70 N-Ch 0.70 1.25 VGS = - 1.8 V, ID = - 150 mA P-Ch 1.80 2.7 VDS = 10 V, ID = 400 mA N-Ch 1.0 VDS= - 10 V, ID = - 250 mA P-Ch 0.4 IS = 150 mA, VGS = 0 V N-Ch 0.8 1.2 IS = - 150 mA, VGS = 0 V P-Ch - 0.8 - 1.2 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time tON Turn-Off Time tOFF N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA N-Channel VDD = 10 V, RL = 47 Ω ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω P-Channel VDD = - 10 V, RL = 47 Ω ID ≅ - 200 mA, VGEN = - 4.5 V, RG = 10 Ω N-Ch 750 P-Ch 1500 N-Ch 75 P-Ch 150 N-Ch 225 P-Ch 450 N-Ch 5 P-Ch 5 N-Ch 25 P-Ch 35 pC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71168 S-80427-Rev. D, 03-Mar-08 Si1016X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 1200 25 °C I D - Drain Current (mA) I D - Drain Current (A) TC = - 55 °C 1000 0.8 VGS = 5 thru 1.8 V 0.6 0.4 800 125 °C 600 400 0.2 200 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 2.4 1.6 VGS = 1.8 V 0.8 60 40 Crss VGS = 4.5 V 0 200 400 600 800 Coss 20 VGS = 2.5 V 0.0 VGS = 0 V f = 1 MHz Ciss 80 3.2 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 4.0 0 0 1000 4 8 12 16 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.60 5 VDS = 10 V ID = 250 mA 1.40 3 2 1 0 0.0 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 2.5 VGS = 4.5 V ID = 350 mA 1.20 VGS = 1.8 V ID = 150 mA 1.00 0.80 0.2 0.4 0.6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71168 S-80427-Rev. D, 03-Mar-08 0.8 0.60 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1016X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 5 1000 R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = 50 °C 10 1 0.0 4 ID = 350 mA 3 ID = 200 mA 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 Source-Drain Diode Forward Voltage 3 4 5 6 On-Resistance vs. Gate-to-Source Voltage 3.0 0.3 2.5 0.2 ID = 0.25 mA 2.0 0.1 IGSS - ( μA) V GS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 0.0 1.5 - 0.1 1.0 - 0.2 0.5 VGS = 4.5 V - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 0 25 50 75 TJ - T emperature (°C) Threshold Voltage Variance vs. Temperature IGSS vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) TJ - T emperature (°C) 100 125 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - T emperature (°C) BVGSS vs. Temperature www.vishay.com 4 Document Number: 71168 S-80427-Rev. D, 03-Mar-08 Si1016X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 1000 VGS = 5 thru 3 V TJ = - 55 °C 2.5 V 0.6 2V 0.4 1.8 V 0.2 0.5 1.0 1.5 2.0 2.5 125 °C 400 0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 120 4.0 VGS = 0 V f = 1 MHz VGS = 1.8 V 100 3.2 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 600 200 0.0 0.0 2.4 VGS = 2.5 V 1.6 VGS = 4.5 V Ciss 80 60 40 Coss 0.8 20 Crss 0 0.0 0 200 400 600 800 0 1000 4 8 12 16 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 20 1.6 VDS = 10 V ID = 250 mA 4 RDS(on) - On-Resistance (Ω) (Normalized) VGS - Gate-to-Source Voltage (V) 25 °C 800 I D - Drain Current (mA) I D - Drain Current (A) 0.8 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71168 S-80427-Rev. D, 03-Mar-08 1.4 1.6 1.4 VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 5 Si1016X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 5 1000 100 TJ = 25 °C TJ = - 55 °C 10 3 ID = 350 mA 2 ID = 200 mA 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.3 3.0 0.2 2.5 6 ID = 0.25 mA 0.1 2.0 IGSS - (µA) V GS(th) Variance (V) 1 0.0 4 R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 0.0 1.5 - 0.1 1.0 - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 TJ - T emperature (°C) 100 0.0 - 50 125 VGS = 4.5 V - 25 BVGSS - Gate-to-Source Breakdown Voltage (V) Threshold Voltage Variance vs. Temperature 0 25 50 75 TJ - T emperature (°C) 100 125 IGSS vs. Temperature 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - T emperature (°C) BVGSS vs. Temperature www.vishay.com 6 Document Number: 71168 S-80427-Rev. D, 03-Mar-08 Si1016X Vishay Siliconix N- OR P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 500 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71168. Document Number: 71168 S-80427-Rev. D, 03-Mar-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1