EPIGAP ELC-670-24

LED - Chip
ELС-670-24
Preliminary
10.04.2007
rev. 03/06
Radiation
Type
Technology
Electrodes
Red
DDH
GaAlAs/GaAlAs
N (cathode) up
typ. dimensions (µm)
310
Ø120
typ. thickness
150 (±25) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
dotted, 25% covered
LED-02
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
1.95
2.2
V
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
5
Radiant power1
IF = 20 mA
Φe
1.0
Radiant power2
IF = 20 mA
Φe
Luminous intensity1
IF = 20 mA
IV
Luminous intensity2
IF = 20 mA
IV
Peak wavelength
IF = 20 mA
λP
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
25
nm
Switching time
IF = 20 mA
tr, tf
40
ns
1
2
V
12
660
1.3
mW
2.5
mW
15
mcd
30
mcd
670
680
nm
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
Labeling
Type
Lot N°
ΙV(typ) [mcd]
VF(typ) [V]
Quantity
ELС-670-24
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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