LED - Chip ELС-670-24 Preliminary 10.04.2007 rev. 03/06 Radiation Type Technology Electrodes Red DDH GaAlAs/GaAlAs N (cathode) up typ. dimensions (µm) 310 Ø120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm dotted, 25% covered LED-02 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 1.95 2.2 V Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 1.0 Radiant power2 IF = 20 mA Φe Luminous intensity1 IF = 20 mA IV Luminous intensity2 IF = 20 mA IV Peak wavelength IF = 20 mA λP Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 25 nm Switching time IF = 20 mA tr, tf 40 ns 1 2 V 12 660 1.3 mW 2.5 mW 15 mcd 30 mcd 670 680 nm Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° ΙV(typ) [mcd] VF(typ) [V] Quantity ELС-670-24 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1