LED - Chip ELС-810-21 Preliminary 10.04.2007 rev. 08/06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N (cathode) up typ. dimensions (µm) 1000 typ. thickness 150 (±25) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm dotted, 25% covered PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit Forward voltage IF = 20 mA VF 1.4 1.6 V Forward voltage2 IF = 350 mA VF 1.7 2.0 V Reverse voltage IR = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 2.0 2.4 mW Radiant power2 IF = 350 mA Φe 35 40 mW Peak wavelength IF = 20 mA λP 800 810 Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 30 nm Switching time IF = 20 mA tr, tf 60 ns V 815 nm 1 Measured on bare chip on TO-18 header with EPIGAP equipment Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) with EPIGAP equipment (for information only) 2 Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-810-21 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1