EPIGAP ELC-810-21

LED - Chip
ELС-810-21
Preliminary
10.04.2007
rev. 08/06
Radiation
Type
Technology
Electrodes
Infrared
DDH
AlGaAs/AlGaAs
N (cathode) up
typ. dimensions (µm)
1000
typ. thickness
150 (±25) µm
1000
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
dotted, 25% covered
PoC-05
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
IF = 20 mA
VF
1.4
1.6
V
Forward voltage2
IF = 350 mA
VF
1.7
2.0
V
Reverse voltage
IR = 10 µA
VR
5
Radiant power1
IF = 20 mA
Φe
2.0
2.4
mW
Radiant power2
IF = 350 mA
Φe
35
40
mW
Peak wavelength
IF = 20 mA
λP
800
810
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
30
nm
Switching time
IF = 20 mA
tr, tf
60
ns
V
815
nm
1
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) with EPIGAP
equipment (for information only)
2
Labeling
Type
Lot N°
Φe(typ) [mW]
VF(typ) [V]
Quantity
ELС-810-21
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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