LED - Chip ELC-740-25 Preliminary 10.04.2007 rev. 04/06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N (cathode) up typ. dimensions (µm) 325 Ø120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm LED-03 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 1.7 2.0 V Forward voltage IF = 20 mA VF Reverse voltage IR = 100 µA VR 5 Radiant power* IF = 20 mA Φe 1.5 2.5 Peak wavelength IF = 20 mA λp 730 740 Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 30 nm Switching time IF = 20 mA tr, tf 40 ns V mW 750 nm *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-740-25 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1