LED - Chip ELС-685-21-05 discontinued 23.05.2007 rev. 04/07 Radiation Type Technology Electrodes Deep red solderable AlGaAs/GaAs N (cathode) up typ. dimensions (µm) 1000 340 typ. thickness 340 260 (±20) µm 1000 cathode gold alloy, 1.5 µm Ø 11 0 anode gold alloy, 0.5 µm PoC-02 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit Forward voltage IF = 20 mA VF 1.7 2.0 V Forward voltage IF = 300 mA VF 2.0 2.4 V Reverse voltage IR = 10 µA VR 5 Radiant power IF = 20 mA Φe 1.0 1.4 mW Radiant power1 IF = 300 mA Φe 12 17 mW Radiant power2 IF = 300 mA Φe 33 mW Peak wavelength IF = 300 mA λp Spectral bandwidth at 50% IF = 300 mA ∆λ0.5 40 nm Switching time IF = 100 mA tr , t f 40/30 ns V 685 700 710 nm 1 Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment 2 Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-685-21-05 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1