EPIGAP ELC-470-31-1

LED - Chip
ELС-470-31-1
Preliminary
10.04.2007
rev. 02/07
Radiation
Type
Technology
Electrodes
Blue
Standard
InGaN/Al2O3
Both on top side
typ. dimensions (±25) µm
1000
P
typ. thickness
90 (±10) µm
contact metalization
gold alloy, 1.5 µm
N
backside metalization
N
aluminium alloy, 1.0 µm
P
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
IF = 20 mA
VF
2.7
3.0
V
Forward voltage1)
IF = 350 mA
VF
3.24
3.7
V
Reverse voltage
IR = 10 µA
VR
5
Radiant power
IF = 20 mA
Φe
8.8
Radiant power1,2)
IF = 350 mA
Φe
Luminous intensity1)
IF = 350 mA
ΙV
Peak wavelength
IF = 350 mA
λP
Dominant wavelength
IF = 350 mA
λP
Spectral bandwidth at 50%
IF = 350 mA
∆λ0.5
35
nm
Switching time
IF = 20 mA
tr, tf
60
ns
1)
2)
6000
465
V
11.5
mW
150
mW
6500
mcd
467
nm
470
475
nm
Measured on bare chip on TO-18 header
information only
Labeling
Type
Lot N°
Φe(typ) [mW]
VF(typ) [V]
Quantity
ELС-470-31-1
Packing: Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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