EPIGAP ELC-910-12

LED - Chip
ELС-910-12
Preliminary
6/21/2007
rev. 02/07
Radiation
Type
Technology
Electrodes
Infrared
DDH
AlGaAs/AlGaAs
P (anode) up
typ. dimensions (µm)
650
Ø110
typ. thickness
150 (±25) µm
480
25
cathode
gold alloy, 0.5 µm
anode
gold alloy, 1.5 µm
LED-07
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
IF = 20 mA
VF
1.20
V
Forward voltage2
IF = 350 mA
VF
1.45
V
Reverse voltage
IR = 10 µA
VR
Radiant power1
IF = 20 mA
Φe
2.5
mW
Radiant power2
IF = 350 mA
Φe
20
mW
Radiant intensity1
IF = 20 mA
Ιe
0.75
mW/sr
Radiant intensity2
IF = 350 mA
Ιe
12
mW/sr
Peak wavelength
IF = 20 mA
λP
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
60
nm
Switching time
IF = 20 mA
tr , tf
40
ns
5
900
V
910
920
nm
1
Measured on bare chip on TO-18 header
2
Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) (for information only)
Labeling
Type
Lot N°
Φe(typ) [mW]
VF(typ) [V]
Quantity
ELС-910-12
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out on EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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