LED - Chip ELС-690-21 Preliminary 10.04.2007 rev. 03/06 Radiation Type Technology Electrodes Deep red DDH AlGaAs/AlGaAs N (cathode) up typ. dimensions (µm) 1000 typ. thickness 150 (±25) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm dotted, 25% covered PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit Forward voltage IF = 20 mA VF 1.7 1.9 V Forward voltage2 IF = 350 mA VF 1.9 2.3 V Reverse voltage IR = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 1.4 Radiant power2 IF = 350 mA Radiant power2 V 1.9 mW Φe 60 mW IF = 700 mA Φe 100 mW Peak wavelength IF = 20 mA λP Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 22 nm Switching time IF = 20 mA tr, tf 50 ns 680 690 700 nm 1 Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) with EPIGAP equipment (for information only) 2 Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-690-21 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1