LED - Chip ELC-870-12 Preliminary 10.04.2007 rev. 02/07 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs P (anode) up typ. dimensions (µm) 650 Ø110 typ. thickness 160 (+70/-30) µm 480 25 anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm dotted, 25% covered LED-07 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 1.6 V Forward voltage IF = 20 mA VF 1.3 Forward voltage3 IF = 300 mA VF 1.6 Reverse voltage IR = 100 µA VR 5 Radiant power1 IF = 20 mA Φe 2.8 Radiant power2 IF = 20 mA Radiant power3 V V 3.7 mW Φe 7.0 mW IF = 300 mA Φe 50 mW Radiant intensity1 IF = 20 mA Ιe 1.0 mW/sr Radiant intensity3 IF = 300 mA Ιe 13.5 mW/sr Peak wavelength IF = 20 mA λp Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 45 nm Switching time IF = 20 mA tr , t f 10/25 ns 0.75 860 870 880 nm 1 Measured on bare chip on TO-18 header Measured on epoxy covered chip on TO-18 header 3 Measured on bare chip on TO-18 header and heat sink, 10s current flow (information only) 2 Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-870-12 Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1