EPIGAP ELC-870-12

LED - Chip
ELC-870-12
Preliminary
10.04.2007
rev. 02/07
Radiation
Type
Technology
Electrodes
Infrared
DDH
AlGaAs/AlGaAs
P (anode) up
typ. dimensions (µm)
650
Ø110
typ. thickness
160 (+70/-30) µm
480
25
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
dotted, 25% covered
LED-07
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
1.6
V
Forward voltage
IF = 20 mA
VF
1.3
Forward voltage3
IF = 300 mA
VF
1.6
Reverse voltage
IR = 100 µA
VR
5
Radiant power1
IF = 20 mA
Φe
2.8
Radiant power2
IF = 20 mA
Radiant power3
V
V
3.7
mW
Φe
7.0
mW
IF = 300 mA
Φe
50
mW
Radiant intensity1
IF = 20 mA
Ιe
1.0
mW/sr
Radiant intensity3
IF = 300 mA
Ιe
13.5
mW/sr
Peak wavelength
IF = 20 mA
λp
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
45
nm
Switching time
IF = 20 mA
tr , t f
10/25
ns
0.75
860
870
880
nm
1
Measured on bare chip on TO-18 header
Measured on epoxy covered chip on TO-18 header
3
Measured on bare chip on TO-18 header and heat sink, 10s current flow (information only)
2
Labeling
Type
Lot N°
Φe(typ) [mW]
VF(typ) [V]
Quantity
ELС-870-12
Packing: Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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