LED - Chip ELC-875-21 discontinued 6/21/2007 rev. 04/07 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N (cathode) up typ. dimensions (µm) 1000 typ. thickness 180 µm 1000 anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm dotted, 25% covered PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit Forward voltage IF = 20 mA VF 1.3 1.8 V Forward voltage IF = 300 mA VF 1.66 2.1 V Reverse voltage IR = 100 µA VR 5 Radiant power1 IF = 20 mA Φe 2.0 Radiant power2 IF = 300 mA Radiant power3 V 3.0 mW Φe 49 mW IF = 300 mA Φe 95 mW Peak wavelength IF = 300 mA λp Spectral bandwidth at 50% IF = 300 mA ∆λ0.5 45 nm Switching time IF = 300 mA tr, tf 25 ns 860 875 890 nm 1 Measured on bare chip on TO-18 header Measured on bare chip on TO-18 header and heat sink, 10s current flow 3 Measured on epoxy chip on TO-18 header and heat sink, 10s current flow (information only) 2 Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-875-21 Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1