EPIGAP ELC-590-11-05

LED - Chip
ELС-590-11-05
discontinued
10.04.2007
rev. 02/06
Radiation
Type
Technology
Electrodes
Yellow
solderable
AlInGaP/GaAs
P (anode) up
typ. dimensions (µm)
1000
typ. thickness
260 (±20) µm
1000
cathode
gold alloy, 1.5 µm
anode
gold alloy, 1.5 µm
PoC-05
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
2.0
V
Forward voltage
IF = 20 mA
VF
1.8
Forward voltage
IF = 100 mA
VF
2.0
Reverse voltage
IF = 10 µA
VR
5
Radiant power1
IF = 20 mA
Φe
0.45
Radiant power1
IF = 100 mA
Φe
Luminous intensity1
IF = 100 mA
ΙV
Peak wavelength
IF = 100 mA
λp
Dominant wavelength
IF = 100 mA
λD
592
nm
Spectral bandwidth at 50%
IF = 100 mA
∆λ0.5
17
nm
Switching time
IF = 100 mA
tr, tf
25
ns
1
V
V
0.6
mW
2.8
mW
400
550
mcd
592
595
598
nm
Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Lot N°
Type
Φe(typ) [mW]
VF(typ) [V]
Quantity
ELС-590-11-05
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1