LED - Chip ELС-590-11-05 discontinued 10.04.2007 rev. 02/06 Radiation Type Technology Electrodes Yellow solderable AlInGaP/GaAs P (anode) up typ. dimensions (µm) 1000 typ. thickness 260 (±20) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 1.5 µm PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 2.0 V Forward voltage IF = 20 mA VF 1.8 Forward voltage IF = 100 mA VF 2.0 Reverse voltage IF = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 0.45 Radiant power1 IF = 100 mA Φe Luminous intensity1 IF = 100 mA ΙV Peak wavelength IF = 100 mA λp Dominant wavelength IF = 100 mA λD 592 nm Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 17 nm Switching time IF = 100 mA tr, tf 25 ns 1 V V 0.6 mW 2.8 mW 400 550 mcd 592 595 598 nm Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Lot N° Type Φe(typ) [mW] VF(typ) [V] Quantity ELС-590-11-05 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1