EPIGAP ELC-870-11

LED - Chip
ELС-870-11
Preliminary
6/21/2007
rev. 06/07
Radiation
Type
Technology
Electrodes
Infrared
DDH
AlGaAs/AlGaAs
P (anode) up
typ. dimensions (µm)
1000
1000
typ. thickness
160 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
dotted, 25% covered
PoC-05
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
IF = 20 mA
VF
1.3
1.5
V
Forward voltage2
IF = 350 mA
VF
1.7
1.9
V
Reverse voltage
IR = 10 µA
VR
5
Radiant power1
IF = 20 mA
Φe
3
Radiant power2
IF = 350 mA
Radiant power3
V
4
mW
Φe
62
mW
IF = 350 mA
Φe
120
mW
Radiant power2
IF = 700 mA
Φe
200
mW
Peak wavelength
IF = 20 mA
λP
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
45
nm
Switching time
IF = 20 mA
tr, tf
10/25
ns
860
870
880
nm
1
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on)
3
Measured on epoxy covered chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) with
EPIGAP equipment (for information only)
2
Labeling
Type
Lot N°
Φe(typ) [mW]
VF(typ) [V]
Quantity
ELС-870-11
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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