LED - Chip ELС-740-21 Preliminary 10.04.2007 rev. 01/06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N (cathode) up typ. dimensions (µm) 1000 typ. thickness 150 (±25) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm dotted, 25% covered PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 1.9 V Forward voltage IF = 20 mA VF 1.7 Forward voltage2 IF = 300 mA VF 2.0 Reverse voltage IR = 10 µA VR 5 Radiant power1 IF = 300 mA Φe 9.5 Radiant power2 IF = 300 mA Φe Peak wavelength1 IF = 20 mA λP Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 35 nm Switching time IF = 20 mA tr, tf 50 ns 1 2 730 V V 12 mW 24 mW 740 750 nm Measured on bare chip on TO-18 header Measured on epoxy covered chip on TO-18 header in copper heat sink (for information only) Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-740-21 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1