ESMT M24L28256DA

ESMT
PSRAM
M24L28256DA
2-Mbit (256K x 8)
Pseudo Static RAM
Features
•Advanced low-power architecture
•High speed: 55 ns, 70 ns
•Wide voltage range: 2.7V to 3.3V
•Typical active current: 1 mA @ f = 1 MHz
•Low standby power
•Automatic power-down when deselected
Functional Description
The M24L28256DA is a high-performance CMOS pseudo
static RAM (PSRAM) organized as 256K words by 8 bits.
Easy memory expansion is provided by an active LOW Chip
Enable( CE 1) and active HIGH Chip Enable ( CE 2),and active
LOW Output Enable ( OE ).This device has an automatic
power-down feature that reduces power consumption
dramatically when deselected. Writing to the device is
Enable ( WE ) inputs LOW and Chip Enable Two ( CE 2) input
HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then
written into the location specified on the address pins (A0
through A17).
Reading from the device is accomplished by asserting the
Chip Enable One ( CE 1) and Output Enable ( OE ) inputs
LOW while forcing Write Enable ( WE ) HIGH. And Chip
Enable Two ( CE 2) HIGH. Under these conditions, the
contents of the memory location specified by the address pins
will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected ( CE 1
HIGH or CE2 LOW), the outputs are disabled ( OE HIGH), or
during write operation ( CE 1 LOW, CE2 HIGH, and WE
LOW). See the Truth Table for a complete description of read
and write modes.
accomplished by asserting Chip Enable One ( CE 1) and Write
Logic Block Diagram
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.0
1/10
ESMT
M24L28256DA
Pin Configuration[1]
VFBGA
Top View
Product Portfolio
Power Dissipation
VCC Range (V)
Operating ICC(mA)
Product
Standby ISB2(µA)
Speed(ns)
f = 1MHz
M24L28256DA
Min.
Typ.
Max.
2.7
3.0
3.3
55
70
Typ.[2]
Max.
1
5
f = fMAX
Typ.[2]
Max.
14
22
8
15
Typ. [2]
Max.
9
40
Notes:
1. NC “no connect”—not connected internally to the die.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ)
and TA = 25°C.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.0
2/10
ESMT
M24L28256DA
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature ...................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–40°C to +85°C
Supply Voltage to
Ground Potential . ............... ............ ...........−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[3, 4, 5] .................................−0.4V to 3.7V
DC Input Voltage[3, 4, 5].................... .........−0.4V to 3.7V
Output Current into Outputs (LOW) ...............................20 mA
Static Discharge Voltage ........................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Ambient
Temperature (TA)
VCC
Extended
−25°C to +85°C
2.7V to 3.3V
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
Min.
VCC
VOH
VOL
VIH
VIL
IIX
IOZ
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
Output Leakage
Current
2.7
VCC0.4
IOH = −0.1 mA
-55
-70
Typ.
[2]
3.0
Typ.
[2]
Max.
Min.
3.3
2.7
VCC0.4
IOL = 0.1 mA
3.3
≤ VCC , Output
VCC = 3.3V
IOUT = 0mA
CMOS levels
V
V
0.4
GND ≤ VIN ≤ VCC
GND ≤ VOUT
Disable
f = fMAX = 1/tRC
Unit
Max.
0.4
V
0.8*
VCC
VCC+
0.4
0.8*
VCC
VCC
+0.4
V
-0.4
0.4
-0.4
0.4
V
-1
+1
-1
+1
µA
-1
+1
-1
+1
µA
14
22
8
15
1
5
1
5
CE 1 ≥ VCC−0.2V, CE2 ≤ 0.2V
VIN ≥ VCC − 0.2V, VIN ≤ 0.2V,
f = fMAX (Address and Data Only),
f=0
40
250
40
250
µA
CE 1 ≥ VCC−0.2V, CE2 ≤ 0.2V
VIN ≥ VCC − 0.2V, VIN ≤ 0.2V,
f = 0, VCC = 3.3V
9
40
9
40
µA
ICC
VCC Operating
Supply Current
f = 1 MHz
ISB1
Automatic CE 1
Power-Down
Current
—CMOS Inputs
ISB2
Automatic CE 1
Power-Down
Current
—CMOS Inputs
mA
Capacitance[6]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
Max.
Unit
8
8
pF
pF
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
Thermal Resistance[6]
Parameter
Description
Test Conditions
BGA
Unit
ΘJA
Thermal Resistance(Junction to Ambient)
55
°C/W
ΘJC
Thermal Resistance (Junction to Case)
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/ JESD51.
17
°C/W
Notes:
3.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.
4.VIL(MIN) = –0.5V for pulse durations less than 20 ns.
5.Overshoot and undershoot specifications are characterized and are not 100% tested.
6.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.0
3/10
ESMT
M24L28256DA
AC Test Loads and Waveforms
Parameters
R1
R2
RTH
VTH
3.0V (VCC)
22000
22000
11000
1.50
Unit
Ω
Ω
Ω
V
Switching Characteristics (Over the Operating Range) [7]
Parameter
Description
-55
Min.
-70
Max.
Min.
Max.
Unit
Read Cycle
tRC
tAA
tOHA
tACE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE 1 LOW and CE2 HIGH to Data Valid
55
70
ns
ns
ns
ns
tDOE
OE LOW to Data Valid
25
35
ns
tLZOE
OE LOW to Low Z[8, 9]
tHZOE
OE HIGH to High Z[8, 9]
tLZCE
CE 1 LOW and CE2 HIGH to LOW Z[8, 9]
tHZCE
CE 1 HIGH and CE2 LOW to HIGH Z[ 8, 9]
Address Skew
tSK[11]
Write Cycle [10]
tWC
tSCE
tAW
tHA
tSA
tPWE
Write Cycle Time
55[11]
70
55
5
70
10
5
ns
5
25
5
25
ns
5
25
0
ns
25
10
ns
ns
WE Pulse Width
55
45
45
0
0
40
tSD
Data Set-Up to Write End
25
25
ns
tHD
Data Hold from Write End
0
0
ns
tHZWE
WE LOW to High-Z[8, 9]
tLZWE
WE HIGH to Low-Z[8, 9]
CE 1 LOW and CE2 HIGH to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
70
55
55
0
0
55
ns
ns
ns
ns
ns
ns
25
5
25
5
ns
ns
Notes:
7. Test conditions assume signal transition time of 1V/ns or higher, timing reference levels of VCC(typ)/2, input pulse levels of 0V
to VCC(typ), and output loading of the specified IOL/IOH and 30-pF load capacitance
8. tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high-impedance state.
9. High-Z and Low-Z parameters are characterized and are not 100% tested.
10. The internal write time of the memory is defined by the overlap of WE , CE 1= VIL, and CE2=VIH . All signals must be
ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold
timing should be referenced to the edge of the signal that terminates write.
11. To achieve 55-ns performance, the read access should be CE controlled. In this case tACE is the critical parameter and tSK
is satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be
stable within 10 ns after the start of the read cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.0
4/10
ESMT
M24L28256DA
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)[11, 12, 13]
Read Cycle 2 ( OE Controlled)[11, 13]
Notes:
12. Device is continuously selected. OE , CE 1=VIL and CE2 = VIH.
13. WE is HIGH for Read Cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.0
5/10
ESMT
M24L28256DA
Switching Waveforms (continued)
Write Cycle No.1 ( WE Controlled)[9,10, 14, 15, 16]
Write Cycle 2 ( CE 1 or CE2 Controlled) [9, 10, 14, 15, 16]
Notes:
14.Data I/O is high impedance if OE ≥ VIH.
15. If Chip Enables go INACTIVE simultaneously with WE =HIGH, the output remains in a high-impedance state.
16.During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.0
6/10
ESMT
M24L28256DA
Switching Waveforms (continued)
Write Cycle 3 ( WE Controlled, OE LOW)[15, 16]
Truth Table[17]
CE 1
H
X
CE2
X
L
OE
X
X
WE
X
X
L
H
L
L
H
L
H
I/O0-I/O7
Mode
High Z
High Z
Power-Down
Power-Down
Power
Standby (ISB)
Standby (ISB)
H
Data Out
Read
Active (ICC)
X
L
Data In
Write
Active (ICC)
H
H
High Z
Selected, Outputs Disabled
Active (ICC)
Ordering Information
Speed (ns)
55
70
Ordering Code
M24L28256DA-55BEG
M24L28256DA-70BEG
Package Type
36-Lead VFBGA (6 x 8 x 1 mm) (Pb-free)
36-Lead VFBGA (6 x 8 x 1 mm) (Pb-free)
Operating Range
Extended
Extended
Note:
17.H = Logic HIGH, L = Logic LOW, X = Don’t Care.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.0
7/10
ESMT
M24L28256DA
Package Diagrams
36-Lead VFBGA (6 x 8 x 1 mm)
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.0
8/10
ESMT
M24L28256DA
Revision History
Revision
Date
1.0
2007.07.19
Elite Semiconductor Memory Technology Inc.
Description
Original
Publication Date : Jul. 2007
Revision : 1.0
9/10
ESMT
M24L28256DA
Important Notice
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No part of this document may be reproduced or duplicated in any form or by any means without the
prior permission of ESMT.
The contents contained in this document are believed to be accurate at the time of publication.
ESMT assumes no responsibility for any error in this document, and reserves the right to change
the products or specification in this document without notice.
The information contained herein is presented only as a guide or examples for the application of
our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or
other intellectual property rights of third parties which may result from its use. No license, either
express , implied or otherwise, is granted under any patents, copyrights or other intellectual
property rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To minimize risks
associated with customer's application, adequate design and operating safeguards against injury,
damage, or loss from such failure, should be provided by the customer when making application
designs.
ESMT's products are not authorized for use in critical applications such as, but not limited to, life
support devices or system, where failure or abnormal operation may directly affect human lives or
cause physical injury or property damage. If products described here are to be used for such kinds
of application, purchaser must do its own quality assurance testing appropriate to such
applications.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.0
10/10