EIC1012-12 10.95-12.75 GHz 12-Watt Internally Matched Power FET FEATURES • • • • • • • Excelics 10.95 – 12.75 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 6 dB Power Gain at 1dB Compression 28% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 EIC1012-12 .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V VP Pinch-off Voltage VDS = 3 V, IDS = 75 mA RTH MIN TYP 41 41.5 dBm 5 6 dB Output Power at 1dB Compression f = 10.95-12.75 GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 10.95-12.75 GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 10.95-12.75 GHz VDS = 10 V, IDSQ ≈3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f =10.95-12.75 GHz MAX UNITS ±0.75 dB 28 f =10.95-12.75 GHz 2 Thermal Resistance % 3700 4100 mA 8 10 A -2.5 -4.0 1.8 2.1 V o C/W Note: 1) Tested with 30 Ohm gate resistor. Forward and reverse gate current should not exceed 130mA and -10.5mA respectively 2) Overall Rth depends on case mounting. MAXIMUM RATING AT 25°C1,2 SYMBOLS Vds Vgs Pin Tch Tstg Pt PARAMETERS ABSOLUTE1 OPERATING2 15 10V Drain-Source Voltage Gate-Source Voltage -5 -4V Input Power 37.5dBm @ 3dB Compression Channel Temperature 175 oC 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 71.5W 71.5W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revision 01 EIC1012-12 10.95-12.75 GHz 12-Watt Internally Matched Power FET PACKAGE OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified Excelics EIC1012-12 YYWW SN DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revision 01