EIC1415-12 14.40-15.40GHz 12-Watt Internally Matched Power FET FEATURES • • • • • • • • 14.40– 15.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 5 dB Power Gain at 1dB Compression 23% Power Added Efficiency -44 dBc IM3 at Po = 30 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH Excelics .024 EIC1415-12 .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL Output Power at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 14.40-15.40GHz P1dB G1dB ∆G PAE MIN TYP MAX 40 41 dBm 4 5 dB ±0.7 dB 23 % Id1dB Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 30 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 15.40GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 9000 13000 VP Pinch-off Voltage VDS = 3 V, IDS = 84 mA -2.5 -4.0 f = 14.40-15.40GHz 3700 -41 4200 mA -44 3 RTH UNITS Thermal Resistance 1.8 dBc mA V o 2.1 C/W Note: 1. Tested with 30 Ohm gate resistor, forward and reverse gate current should nopt exceed 35mA and -5.1mA respectively. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOLS PARAMETERS Pin Drain-Source Voltage Gate-Source Voltage Input Power Tch Tstg Pt Channel Temperature Storage Temperature Total Power Dissipation (Tc=25°) Vds Vgs 1 2 ABSOLUTE OPERATING 15V 10V -5V -4V Output power reach 3dB Gain Compression point Output power reach 3dB Gain Compression point 175°C 175°C -65°C to +175°C -65°C to +175°C 71W 71W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Page 1 of 3 Revision. 01 EIC1415-12 14.40-15.40GHz 12-Watt Internally Matched Power FET PERFORMANCE DATA 10 5 S(2,2) S(1,1) dB(S(1,2)) dB(S(2,1)) 0 -5 -10 -15 -20 14.0 14.2 14.4 14.6 freq (14.10GHz to 15.70GHz) Frequency GHZ 14.10 14.20 14.30 14.40 14.50 14.60 14.70 14.80 14.90 15.00 15.10 15.20 15.30 15.40 15.50 15.60 15.70 S12 ANG -165.9 178.5 164.3 150.8 138.2 127.1 116.4 105.3 94.9 84.5 73.8 63.1 51.9 39.3 25.2 9.6 -10.7 15.0 15.2 15.4 15.6 15.8 freq, GHz S11 MAG 0.501 0.500 0.499 0.507 0.511 0.513 0.521 0.522 0.515 0.506 0.490 0.462 0.436 0.399 0.351 0.310 0.264 14.8 MAG 0.127 0.131 0.132 0.135 0.137 0.139 0.142 0.144 0.147 0.151 0.154 0.156 0.159 0.161 0.162 0.162 0.162 S21 ANG 23.5 13.7 4.6 -4.7 -13.1 -22.4 -30.9 -39.9 -48.3 -57.1 -66.5 -75.7 -85.1 -94.9 -104.8 -115.1 -124.9 MAG 2.02 2.02 2.02 2.03 2.02 2.02 2.03 20.4 2.05 2.06 2.06 2.06 2.07 2.07 2.06 2.04 2.00 S22 ANG 55.8 45.8 36.1 26.5 17.3 8.2 -0.95 -10.2 -19.8 -29.5 -39.1 -49.2 -59.5 -69.9 -80.5 -91.4 -102.5 MAG 0.451 0.422 0.389 0.365 0.335 0.300 0.265 0.233 0.190 0.140 0.094 0.054 0.039 0.076 0.128 0.185 0.244 ANG -8.1 -13.1 -18.1 -22.8 -28.3 -33.5 -37.9 -43 -51.7 -60 -72.2 -94.1 -170.6 132.5 111.5 100.2 91.9 Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 3200mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Page 2 of 3 Revision. 01 EIC1415-12 14.40-15.40GHz 12-Watt Internally Matched Power FET G1dB V.S Frequency 43 10 39 8 35 6 G1dB/dB P1dB/dBm P1dB V.S Frequency 31 27 23 14.2 4 2 14.4 14.6 14.8 15 15.2 15.4 15.6 0 14.2 Frequency/GHz 14.4 14.6 14.8 15 15.2 15.4 15.6 Frequency/GHz VDS = 10 V, IDSQ ≈ 3200mA DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Page 3 of 3 Revision. 01