EIC1010-4 ISSUED 10/29/2008 10.0-10.70GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 10.0–10.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH Excelics EIC1010-4 YYWW SN ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS1 MIN IDSS Frequency Output Power at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA Drain Current at 1dB Compression Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V VP Pinch-off Voltage Freq P1dB G1dB ∆G PAE Id1dB IM3 RTH Thermal Resistance Note: 1. Tested with 100 Ohm gate resistor. TYP 10 MAX UNITS 10.7 Ghz 35.5 36.5 dBm 6.5 7.5 dB ±0.6 dB 30 % 1200 -43 VDS = 3 V, IDS = 20 mA 3 -46 mA dBc 2000 2500 -2.5 -4.0 5.5 2. S.C.L. = Single Carrier Level. 1300 mA V o 6.0 C/W 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS Vds Vgs Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 15V 10V -5V -4V 48mA 14.4mA -9.6mA -2.4mA 36dBm @ 3dB Compression 175C 175C -65C to +175C -65C to +175C 25W 25W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 October 2008 EIC1010-4 10.0-10.70GHz 4-Watt Internally-Matched Power FET ISSUED 10/29/2008 PACKAGES OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified EIC1010-4 (Hermetic) EIC1010-4NH (Non-Hermetic) Excelics Excelics EIC1010-4 EIC1010-4NH YYWW YYWW SN SN ALL DIMENSIONS IN INCHES ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. Caution! ESD sensitive device. ORDERING INFORMATION Part Number Packages Grade1 fTest (GHz) P1dB (min) IM3 (min)2 EIC1010-4 Hermetic Industrial 10.0-10.70GHz 35.5 -43 EIC1010-4NH Non-Hermetic Industrial 10.0-10.70GHz 35.5 -43 Notes: 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 October 2008