EIC1010-25 10.0-10.25 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 10.0 – 10.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 dBm Output Power at 1dB Compression 7 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH Excelics EIC1010-25 0.945 0.024 0.803 0.580 YYWW SN 0.315 0.055 0.685 0.010 0.168 0.617 0.004 0.158 ELECTRICAL CHARACTERISTICS (Ta = 25°C) P1dB G1dB ∆G PAE Drain Current at 1dB Compression IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V VP Pinch-off Voltage VDS = 3 V, IDS = 130 mA TYP 43 44 dBm 6.5 7 dB MAX UNITS ±0.6 dB 33 f = 10.0-10.25GHz 2 RTH 2. MIN Output Power at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Gain at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Gain Flatness f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Power Added Efficiency at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Id1dB 1. Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1 SYMBOL 0.095 0.055 Thermal Resistance % 6500 7200 mA 11 16 A -2.5 -4.0 1.4 V o 1.8 C/W Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 105mA and -10.5mA respectively Overall Rth depends on case mounting. MAXIMUM RATING AT 25°C1,2 SYMBOLS Vds Vgs Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V Input Power 38.5 dBm @ 3dB Compression PARAMETERS Channel Temperature o 175 oC 175 C o Storage Temperature -65 to +175 C -65 to +175 oC Total Power Dissipation 83W 83W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revision 01 EIC1010-25 10.0-10.25 GHz 25-Watt Internally Matched Power FET 10 5 S(2,2) S(1,1) dB(S(1,2)) dB(S(2,1)) 0 -5 -10 -15 -20 9.7 9.8 9.9 10.0 S11 MAG ANG 0.542 21.8 0.457 9.2 0.349 -4.0 0.218 -15.3 0.077 -9.8 0.095 96.3 0.232 94.4 0.346 81.5 0.428 67.9 0.479 54.5 10.2 10.3 10.4 10.5 10.6 freq, GHz freq (9.700GHz to 10.60GHz) Frequency GHz 9.7 9.8 9.9 10 10.1 10.2 10.3 10.4 10.5 10.6 10.1 S21 MAG 0.104 0.116 0.127 0.138 0.143 0.147 0.144 0.139 0.132 0.125 ANG -48.9 -65.0 -81.8 -100.3 -119.5 -139.0 -158.3 -176.3 166.7 150.6 S12 MAG 2.238 2.398 2.551 2.675 2.731 2.684 2.597 2.42 2.212 2.029 ANG 0.3 -15.2 -31.9 -50.2 -69.2 -89.1 -107.8 -126.4 -143.3 -159.8 S22 MAG 0.488 0.467 0.432 0.379 0.322 0.264 0.243 0.265 0.317 0.377 ANG 56.5 41.0 23.5 2.1 -23.9 -58.3 -99.5 -136.7 -165.0 174.3 Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 9 V, IDSQ ≈ 4000mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 Revision 01 EIC1010-25 10.0-10.25 GHz 25-Watt Internally Matched Power FET G1dB v.s Frequency P1dB v.s Frequency 45 8.5 8 44 G1dB/dB P1dB/dBm 7.5 43 42 7 6.5 41 40 9.95 6 10 10.05 10.1 10.15 10.2 10.25 5.5 9.95 10.3 10 10.05 10.1 10.15 10.2 10.25 10.3 Frequency/GHz Frequency/GHz VDS = 9 V, IDSQ ≈ 4000mA PACKAGE OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified 2X 0.079 MIN 4X 0.102 Excelics EIC1010-25 0.945 0.024 0.803 0.580 YYWW SN 0.315 0.055 0.685 0.010 0.168 0.617 0.004 0.158 0.055 0.095 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revision 01 EIC1010-25 10.0-10.25 GHz 25-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revision 01