EID1415A1-3 14.40-15.35GHz, 3-Watt Internally-Matched Power FET ISSUED: 02/19/2009 FEATURES • • • • • • 14.40-15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package Id1dB PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 700 mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 700 mA Gain Flatness f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 700 mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 700 mA f = 14.40-15.35GHz Drain Current at 1dB Compression f = 14.40-15.35GHz IDSS Saturated Drain Current VP Pinch-off Voltage P1dB G1dB ∆G PAE SN MIN TYP MAX 33.5 34.5 dBm 7.0 8.0 dB + 0.6 dB 30 % mA VDS = 3 V, VGS = 0 V 1040 1440 mA VDS = 3 V, IDS = 10 mA -1.2 -2.5 11.0 2. S.C.L. = Single Carrier Level. UNITS 900 Thermal Resistance RTH YM 750 3 Notes: 1. Tested with 100 Ohm gate resistor. EID1415A1-3 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL Excelics 12.0 V o C/W 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 10 V VGS Gate to Source Voltage -3 V IDS Drain Current IDSS IGSF Forward Gate Current 20 mA PIN Input Power PT Total Power Dissipation 10 W TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C @ 3dB compression Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised February 2009 EID1415A1-3 ISSUED: 02/19/2009 14.40-15.35GHz, 3-Watt Internally-Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised February 2009