EXCELICS EIC8596-12NH

EIC8596-12
8.50-9.60 GHz 12-Watt Internally Matched Power FET
UPDATED 07/25/2007
FEATURES
•
•
•
•
•
•
•
8.50– 9.60GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
34% Power Added Efficiency
-46 dBc IM3 at PO = 30.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
PARAMETERS/TEST CONDITIONS1
SYMBOL
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 3200mA
MIN
TYP
MAX
UNITS
40.5
41.5
dBm
6.0
7.0
dB
±0.6
dB
34
f = 8.50-9.60GHz
%
Id1dB
Drain Current at 1dB Compression
3300
IM3
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 30.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 9.60GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
6200
7800
mA
VP
Pinch-off Voltage
VDS = 3 V, IDS = 62 mA
-2.5
-4.0
V
RTH
Thermal Resistance3
2.5
3.0
-43
3700
mA
-46
dBc
o
C/W
Note: 1. Tested with 50 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
ABSOLUTE1
CONTINUOUS2
Drain-Source Voltage
15
10V
Gate-Source Voltage
-5
-3V
PARAMETERS
Forward Gate Current
129.6mA
43.2mA
Reserve Gate Current
-21.6mA
-7.2mA
Input Power
40.5dBm
@ 3dB Compression
Channel Temperature
o
175 oC
175 C
o
Storage Temperature
-65 to +175 C
-65 to +175 oC
Total Power Dissipation
50W
50W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
EIC8596-12
8.50-9.60 GHz 12-Watt Internally Matched Power FET
UPDATED 07/25/2007
PACKAGES OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
EIC8596-12 (Hermetic)
Excelics
EIC8596-12NH (Non-Hermetic)
Excelics
.024
EIC8596-12
.827±.010 .669
EIC8596-12NH
.421
.120 MIN
.120 MIN
YYWW
YYWW
SN
SN
.004
.125
.063
.508±.008
.442
.004
.168±.010
.105±.008
ALL DIMENSIONS IN INCHES
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
Caution! ESD sensitive device.
ORDERING INFORMATION
Part Number
Packages
Grade1
fTest (GHz)
P1dB (min)
IM3 (min)2
EIC8596-12
Hermetic
Industrial
8.50-9.60GHz
40.5
-43
EIC8596-12NH
Non-Hermetic
Industrial
8.50-9.60GHz
40.5
-43
Notes:
1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in “Electrical Characteristics” table.
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised July 2007