EIC8596-2 8.50-9.60 GHz 2-Watt Internally-Matched Power FET UPDATED 07/25/2007 FEATURES • • • • • • • 8.50-9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 22.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550mA Power Added Efficiency at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550mA P1dB G1dB ∆G PAE MIN TYP 32.5 33.5 dBm 7.0 8.0 dB ±0.6 MAX + 0.8 IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 9.60GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 1000 1250 VP Pinch-off Voltage VDS = 3 V, IDS = 10 mA -2.5 -4.0 Notes: 1. 2. 3. f = 8.50-9.60GHz 600 % Drain Current at 1dB Compression -43 Thermal Resistance RTH dB 30 Id1dB 3 UNITS 700 -46 11 mA dBc 12 mA V o C/W Tested with 100 Ohm gate resistor. S.C.L. = Single Carrier Level. Overall Rth depends on case mounting. MAXIMUM RATING AT 25 °C 1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V Forward Gate Current 21.6mA 7.2mA PARAMETERS Reverse Gate Current -3.6mA -1.2mA Input Power 32.5dBm @ 3dB Compression Channel Temperature 175 oC 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 12.5W 12.5W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised July 2007 EIC8596-2 8.50-9.60 GHz 2-Watt Internally-Matched Power FET UPDATED 07/25/2007 PACKAGES OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified EIC8596-2 (Hermetic) EIC8596-2NH (Non-Hermetic) Excelics Excelics EIC8596-2NH EIC8596-2 YYWW YYWW ALL DIMENSIONS IN INCHES ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. Caution! ESD sensitive device. ORDERING INFORMATION Part Number Packages Grade1 fTest (GHz) P1dB (min) IM3 (min)2 EIC8596-2 Hermetic Industrial 8.50-9.60GHz 32.5 -43 EIC8596-2NH Non-Hermetic Industrial 8.50-9.60GHz 32.5 -43 Notes: 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised July 2007