Si4565DY New Product Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P Channel P-Channel −40 40 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 5.2 0.045 @ VGS = 4.5 V 4.9 0.054 @ VGS = −10 V −4.5 0.072 @ VGS = −4.5 V −3.9 TrenchFET Power MOSFET 100% Rg Tested UIS Tested Qg (Typ) APPLICATIONS 8 CCFL Inverter 9 S2 D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 Top View S1 D2 N-Channel MOSFET P-Channel MOSFET Ordering Information: Si4565DY—E3 Si4565DY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol 10 secs P-Channel Steady State 10 secs Steady State Drain-Source Voltage VDS 40 −40 Gate-Source Voltage VGS "12 "16 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipatioa L = 0.1 0 1 mH TA = 25C TA = 70C Operating Junction and Storage Temperature Range IS 3.9 −4.5 −3.3 4.2 3.1 −3.6 −2.7 −1.7 −0.9 30 1.7 A 0.9 IAS 13 EAS 8.5 PD V 5.2 IDM Unit 16 13 mJ 2.0 1.1 2 1.1 1.3 0.7 1.3 0.7 TJ, Tstg −55 to 150 W C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF P-Channel Typ Max Typ Max 52 62.5 50 62.5 90 110 85 110 32 40 30 40 Unit C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73224 S-50033—Rev. A, 17-Jan-05 www.vishay.com 1 Si4565DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS Temperature Coefficient DVDS/Tj VDS = VGS, ID = 250 mA N-Ch 0.6 1.6 VDS = VGS, ID = −250 mA P-Ch −0.8 −2.2 ID = 250 mA VGS(th) Temperature Coefficient Gate Body Leakage Gate-Body Zero Gate Voltage Drain Current On State Drain Currenta On-State Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea DVGS(th)/Tj IGSS IDSS ID(on) D( ) rDS(on) DS( ) gfs f VSD N-Ch 40 P-Ch −40 N-Ch −3.8 P-Ch 3.4 V mV/C VDS = 0 V, VGS = "12 V N-Ch "100 VDS = 0 V, VGS = "16 V P-Ch "100 VDS = 40 V, VGS = 0 V N-Ch 1 −1 VDS = −40 V, VGS = 0 V P-Ch VDS = 40 V, VGS = 0 V, TJ = 55C N-Ch 10 VDS = −40 V, VGS = 0 V, TJ = 55C P-Ch −10 VDS w 5 V, VGS = 10 V N-Ch 20 VDS p −5 V, VGS = −10 V P-Ch −20 VGS = 10 V, ID = 5.2 A N-Ch 0.033 0.040 VGS = −10 V, ID = −4.5 A P-Ch 0.045 0.054 VGS = 4.5 V, ID = 4.9 A N-Ch 0.037 0.045 VGS = −4.5 V, ID = −3.9 A P-Ch 0.059 0.072 VDS = 15 V, ID = 5.2 A N-Ch 18 VDS = −15 V, ID = −4.5 A P-Ch 13 IS = 1.7 A, VGS = 0 V N-Ch 0.75 1.2 IS = −1.7 A, VGS = 0 V P-Ch −0.79 −1.2 N-Ch 700 P-Ch 805 nA mA A W S V Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Gate Resistance Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Source-Drain Reverse Recovery Time Body Diode Reverse Recovery Charge N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel P Channel VDS = −20 V, V VGS = 0 V, V f = 1 MHz N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5.2 A P-Channel P Channel VDS = −20 V, V VGS = −4.5 −4 5 V V, ID = −4.5 −4 5 A tr td(off) d( ff) tf trr Qrr 76 P-Ch 120 N-Ch 45 P-Ch 85 N-Ch 8 12 P-Ch 9 14 N-Ch 1.5 P-Ch 2 N-Ch 2.4 P-Ch Rg td(on) d( ) N-Ch N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A A, VGEN = 10 V V, Rg = 6 W P-Channel VDD = −15 V,, RL = 15 W ID ^ −1 1A A, VGEN = −10 10 V V, Rg = 6 W pF nC 3.6 N-Ch 0.9 1.9 2.9 P-Ch 5 11.5 18 N-Ch 7 11 P-Ch 8 13 N-Ch 11 17 P-Ch 12 18 N-Ch 27 40 P-Ch 74 110 N-Ch 8 13 P-Ch 38 60 IF = 1.7 A, di/dt = 100 A/ms N-Ch 25 40 IF = −1.7 A, di/dt = 100 A/ms P-Ch 27 45 IF = 1.7 A, di/dt = 100 A/ms N-Ch 17 26 IF = −1.7 A, di/dt = 100 A/ms P-Ch 17 26 W ns ns nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73224 S-50033—Rev. A, 17-Jan-05 Si4565DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) N-CHANNEL Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 3 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 12 8 2V 4 12 8 TC = 125C 4 25C 0 0 1 2 3 4 0 0.0 5 0.5 VDS − Drain-to-Source Voltage (V) 1.0 0.045 1000 VGS = 4.5 V VGS = 10 V 0.030 0.025 800 2.5 3.0 Ciss 600 400 Coss 200 0.020 Crss 0 0 4 8 12 16 20 0 5 ID − Drain Current (A) 10 15 20 25 30 35 40 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 6 1.8 ID = 5.2 A 5 1.6 VDS = 10 V 4 rDS(on) − On-Resistance (Normalized) V GS − Gate-to-Source Voltage (V) 2.0 Capacitance 1200 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 0.035 1.5 VGS − Gate-to-Source Voltage (V) 0.050 0.040 −55C 3 VDS = 20 V 2 1 VGS = 10 V ID = 5.2 A 1.4 1.2 1.0 0.8 0 0 1 2 3 4 5 6 7 8 9 Qg − Total Gate Charge (nC) Document Number: 73224 S-50033—Rev. A, 17-Jan-05 10 11 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (C) www.vishay.com 3 Si4565DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) N-CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 20 10 r DS(on) − On-Resistance ( W ) I S − Source Current (A) ID = 5.2 A TJ = 150C TJ = 25C 0.16 0.12 0.08 TA = 125C 0.04 TA = 25C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD − Source-to-Drain Voltage (V) Threshold Voltage 8 10 100 80 0.2 ID = 250 mA −0.0 Power (W) V GS(th) Variance (V) 6 Single Pulse Power, Junction-to-Ambient 0.4 −0.2 60 40 20 −0.4 −0.6 −50 4 VGS − Gate-to-Source Voltage (V) 0 −25 0 25 50 75 100 125 150 0.01 0.01 0.001 TJ − Temperature (C) 0.1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Foot *Limited by rDS(on) I D − Drain Current (A) 10 1 ms 1 10 ms 0.1 100 ms TC = 25C Single Pulse 1s 10 s dc 0.01 0.1 www.vishay.com 4 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73224 S-50033—Rev. A, 17-Jan-05 Si4565DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 600 100 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25C UNLESS NOTED) P-CHANNEL Output Characteristics Transfer Characteristics 20 20 TC = −55C VGS = 10 thru 4 V 25C 16 I D − Drain Current (A) I D − Drain Current (A) 16 12 3V 8 4 125C 12 8 4 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) Document Number: 73224 S-50033—Rev. A, 17-Jan-05 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) www.vishay.com 5 Si4565DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) P-CHANNEL On-Resistance vs. Drain Current Capacitance 1240 0.10 0.08 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 1116 VGS = 4.5 V 0.06 VGS = 10 V 0.04 992 Ciss 868 744 620 496 372 248 0.02 Coss 124 0.00 Crss 0 0 4 8 12 16 0 20 5 10 ID − Drain Current (A) 20 25 30 35 40 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 6 1.8 ID = 4.5 A 5 VGS = 10 V ID = 4.5 A 1.6 rDS(on) − On-Resistance (Normalized) V GS − Gate-to-Source Voltage (V) 15 4 VDS = 10 V VDS = 20 V 3 2 1 1.4 1.2 1.0 0.8 0 0 2 4 6 8 10 0.6 −50 12 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.30 20 10 TJ = 150C TJ = 25C 1 0.0 www.vishay.com 0.20 0.15 0.10 TA = 125C 0.05 TA = 25C 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) 6 r DS(on) − On-Resistance ( W ) I S − Source Current (A) ID = 4.5 A 0.25 1.2 1.4 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Document Number: 73224 S-50033—Rev. A, 17-Jan-05 Si4565DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) P-CHANNEL Threshold Voltage Single Pulse Power 0.6 50 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) 0.4 0.0 20 10 −0.2 −0.4 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 1 0.1 TJ − Temperature (C) 10 100 600 Time (sec) 100 Safe Operating Area, Junction-to-Ambient IDM Limited *rDS(on) Limited I D − Drain Current (A) 10 1 ms 1 10 ms ID(on) Limited 0.1 1s 10 s dc BVDSS Limited 0.01 0.1 100 ms TA = 25C Single Pulse 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85C/W Single Pulse 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 0.01 10−4 Document Number: 73224 S-50033—Rev. A, 17-Jan-05 10−3 10−2 10−1 1 10 100 600 www.vishay.com 7 Si4565DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) P-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73224. www.vishay.com 8 Document Number: 73224 S-50033—Rev. A, 17-Jan-05