isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5108 DESCRIPTION ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE APPLICATIONS ·Designed for general purpose Class C amplifier applications up to 1 GHz ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 55 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4 V Collector Current 0.4 A Collector Power Dissipation @TC=25℃ 3.5 IC PC Tj Tstg W Collector Power Dissipation @Ta=25℃ 1.0 Junction Temperature 175 ℃ -55~175 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5108 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage ICBO MAX UNIT IC= 100mA; IB= 10mA 0.5 V Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 10mA; VCE= 10V Current-Gain—Bandwidth Product IC= 50mA;VCE= 10V;f= 200MHz Output Capacitance IE= 0;VCB= 28V; ftest= 1.0MHz fT COB isc Website：www.iscsemi.cn CONDITIONS MIN 40 TYP. 150 1200 MHz 3.3 pF